The growth and electrical transport properties of self-organized metal/oxide nanostructures formed by anodizing Ta-Al thin-film bilayers

2005 ◽  
Vol 40 (24) ◽  
pp. 6399-6407 ◽  
Author(s):  
A. Mozalev ◽  
G. Gorokh ◽  
M. Sakairi ◽  
H. Takahashi
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties ◽  
Self Organized ◽  
Oxide Nanostructures ◽  
Metal Oxide Nanostructures ◽  
Al Thin Film

Electrical transport properties of thin-film metal-oxide-metal Nb2O5 oxygen sensors

1996 ◽  
Vol 37 (1-2) ◽  
pp. 83-89 ◽  
Author(s):  
D Rosenfeld ◽  
P.E Schmid ◽  
S Széles ◽  
F Lévy ◽  
V Demarne ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Transport Properties ◽  
Electrical Transport ◽  
Oxygen Sensors ◽  
Electrical Transport Properties

Study of structural and electrical transport properties of CaRuO3 bulk and thin film

2020 ◽  
Author(s):  
Roshan Kumar Patel ◽  
Shobha Gondh ◽  
Harish Kumar ◽  
Shuchi Shyam Chitrakar ◽  
A. K. Pramanik
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties

Electrical transport properties in nitrogen-doped p-type ZnO thin film

2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Zno Thin Film ◽  
Electrical Transport Properties ◽  
Nitrogen Doped ◽  
P Type

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

Electrical transport properties in Co‐silicides formed by thin‐film reactions

1986 ◽  
Vol 60 (1) ◽  
pp. 310-317 ◽  
Author(s):  
G. Aprilesi ◽  
E. Mazzega ◽  
M. Michelini ◽  
F. Nava ◽  
G. Queirolo ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties

Measurements on the electrical transport properties in CoSi2 and NiSi2 formed by thin film reactions

1985 ◽  
Vol 125 (1-2) ◽  
pp. 93-99 ◽  
Author(s):  
Ch. Krontiras ◽  
J. Salmi ◽  
L. Grönberg ◽  
I. Suni ◽  
J. Heleskivi ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electrical Transport Properties
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