Dielectric properties of SrBi2Ta2O9 films in the low-temperature range

2005 ◽  
Vol 40 (23) ◽  
pp. 6329-6331 ◽  
Author(s):  
Pingxiong Yang ◽  
Ming Guo ◽  
Meirong Shi
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Temperature Range

scholarly journals Investigation of dielectric properties in tantalum doped AgNbO3 ceramic

2021 ◽  
Vol 2070 (1) ◽  
pp. 012058
Author(s):  
A Joshi ◽  
S C Bhatt ◽  
M Uniyal ◽  
K Kumar
Keyword(s):  
Dielectric Properties ◽  
Phase Shift ◽  
Low Temperature ◽  
Electric Field ◽  
Dielectric Materials ◽  
Major Effect ◽  
Temperature Range ◽  
Electronic Technologies

Abstract Dielectric materials developed from Tantalum (Ta) doped AgNbO3 (ATN) show excellent properties in variety of electronic technologies. In the temperature range of 70 to 400 °C, four major dielectric abnormalities were observed in ATN (x = 0.1) while in ATN (x = 0.2) the maxima of M1-M2 phase shift to low temperature value. ATN ceramics’ dielectric properties dominate temperature and electric field-based performance, which has a major effect on their properties. This study looked into the dielectric properties in ATN.

MAGNETIC PROPERTIES OF U1-xDyxAlyNi5-y (y=0,1) SYSTEMS

2003 ◽  
Vol 17 (27n28) ◽  
pp. 1453-1460
Author(s):  
ILEANA LUPSA
Keyword(s):  
Magnetic Properties ◽  
Low Temperature ◽  
Spin Fluctuation ◽  
Magnetic Moments ◽  
Transition Temperatures ◽  
Temperature Range ◽  
Fluctuation Model ◽  
Magnetically Ordered

The magnetic properties of U 1-x Dy x Al y Ni 5-y (y=0,1) systems were investigated in the 2(5)–600 K temperature range and for fields up to 80 kOe. The systems having x≥0.2 are magnetically ordered with low transition temperatures and magnetization mainly due to the Dy contribution. The nickel exhibits magnetic moments, very weak in the low temperature range and well-defined effective moments over transition temperatures. The nickel behavior is discussed in terms of the spin fluctuation model.

Hydrogen absorption in Ni-catalyzed Mg: A model for measurements in the low temperature range

2014 ◽  
Vol 39 (22) ◽  
pp. 11501-11508 ◽  
Author(s):  
Federico Cova ◽  
Fabiana Gennari ◽  
Pierre Arneodo Larochette
Keyword(s):  
Low Temperature ◽  
Hydrogen Absorption ◽  
Temperature Range

ChemInform Abstract: Low-Temperature Sintering and Microwave Dielectric Properties of Li3MO4(M: Ta, Sb) Ceramics.

ChemInform ◽  
2012 ◽  
Vol 43 (26) ◽  
pp. no-no
Author(s):  
Li-Xia Pang ◽  
Huan Liu ◽  
Di Zhou ◽  
Jia-Xing Yang ◽  
Dang-Juan Li ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Low Temperature ◽  
Microwave Dielectric Properties ◽  
Low Temperature Sintering ◽  
Microwave Dielectric

Effect of TiO2 doping on rapid densification of alumina by plasma activated sintering

1996 ◽  
Vol 11 (5) ◽  
pp. 1144-1148 ◽  
Author(s):  
R. S. Mishra ◽  
A. K. Mukherjee ◽  
K. Yamazaki ◽  
K. Shoda
Keyword(s):  
Dielectric Properties ◽  
Full Density ◽  
Activated Sintering ◽  
Sintering Kinetics ◽  
Temperature Range ◽  
Plasma Activated Sintering

The effects of plasma cycle and TiO2 doping on sintering kinetics during plasma activated sintering (PAS) of γ−Al2O3 have been studied in the temperature range of 1473–1823 K. Multiple plasma cycle leads to higher densification. Also, TiO2 doping enhances the sintering kinetics during PAS. In TiO2 doped specimens, near full density was obtained at 1673 K in less than 6 min using multiple plasma cycle. It is suggested that the dielectric properties of a material are critical for the success of the PAS process.

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