The effect of repeated annealing temperature on the structural, optical, and electrical properties of TiO2 thin films prepared by dip-coating sol–gel method

2009 ◽  
Vol 44 (2) ◽  
pp. 401-407 ◽  
Author(s):  
O. Pakma ◽  
N. Serin ◽  
T. Serin
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Optical And Electrical Properties ◽  
Tio2 Thin Films ◽  
Gel Method ◽  
Sol Gel Method

OPTICAL AND ELECTRICAL PROPERTIES OF ZINC OXIDE THIN FILMS DIP-COATED OF SOL–GEL METHOD

2005 ◽  
Vol 12 (05n06) ◽  
pp. 697-701 ◽  
Author(s):  
M. RUSOP ◽  
K. UMA ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Film Deposition ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Higher Temperature

The transparent c-axis oriented ZnO thin films have been prepared by sol–gel method using zinc acetate as cations source, 2-mrthoxiethanol as solvent and monoethanolamine as sol stabilizer. Film deposition was performed by dip coating technique at a withdrawal rate of 10 mm/min on quartz and silicon substrates. The effect of annealing temperature in air ambient from 100 to 800°C on the structural, optical and electrical properties of the films is discussed. ZnO films annealed with higher temperature showed an extremely sharp (002) peak in the XRD patterns, indicates increased crystallization. The optical transmittance spectra of the films is found to change with annealing temperature and showed a very good transmittance (between 80 to 90%) with the films prepared at 600°C showed highest optical transparency within the visible wavelength region. The absorption edge analysis revealed that the optical band gap is found to increase with annealing temperature up to 3.5 eV at 600°C and decreased with higher temperature. Electronic transition was found to be direct transition type. The minimum electrical resistivity of 55 Ω-cm was obtained for the films annealed at 600°C.

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

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