Organic thermoelectric thin films with large p-type and n-type power factor

2020 ◽  
Vol 56 (6) ◽  
pp. 4291-4304
Author(s):  
Chungyeon Cho ◽  
Yixuan Song ◽  
Jui-Hung Hsu ◽  
Choongho Yu ◽  
Daniel L. Stevens ◽  
...  
2012 ◽  
Vol 538-541 ◽  
pp. 60-63 ◽  
Author(s):  
Zhao Kun Cai ◽  
Ping Fan ◽  
Zhuang Hao Zheng ◽  
Xing Min Cai ◽  
Dong Ping Zhang ◽  
...  

N-type Bi2Te3 and p-type Sb2Te3 thermoelectric thin films have been prepared by RF and DC co-sputtering. The Seebeck coefficient of n-type Bi2Te3 and p-type Sb2Te3 thin films is about -122 μVK-1 and 108 μVK-1, the power factor is about 0.82×10-3 Wm-1K-2 and 1.60×10-3 Wm-1K-2. Then, the films have been selected to fabricate the thin film thermoelectric generator. The results show that the open-circuit voltage of 12.2 mV and the output power of 3.32 μW are obtained for a thin film generator with the temperature difference at 60 K.


2021 ◽  
Vol 119 (2) ◽  
pp. 023302
Author(s):  
Noah J. Stanton ◽  
Rachelle Ihly ◽  
Brenna Norton-Baker ◽  
Andrew J. Ferguson ◽  
Jeffrey L. Blackburn

2018 ◽  
Vol 112 (24) ◽  
pp. 243904 ◽  
Author(s):  
Jiyang Zhou ◽  
Heao Wang ◽  
Dunren He ◽  
Yuan Zhou ◽  
Wei Peng ◽  
...  

2012 ◽  
Vol 622-623 ◽  
pp. 726-733 ◽  
Author(s):  
Weerasak Somkhunthot ◽  
Nuwat Pimpabute ◽  
Tosawat Seetawan

Thin films thermoelectric module fabricated by pulsed-dc magnetron sputtering system using Ca3Co4O9(p-type) and ZnO (n-type) targets of 60 mm diameter and 2.5 mm thickness, which were made from powder precursor, and obtained by solid state reaction. Thin films of p-Ca-Co-O (Seebeck coefficient = 143.85 µV/K, electrical resistivity = 4.80 mΩm, power factor = 4.31 µW/m K2) and n-ZnO (Seebeck coefficient =229.24 µV/K, electrical resistivity = 5.93 mΩm, power factor = 8.86 µW/m K2) were used to make a thermoelectric module, which consist of four pairs of legs connected by copper electrodes (0.5 mm thickness, 3.0 mm width, and 3.0-8.0 mm length). Each leg is 3.0 mm width, 20.0 mm length, and 0.44 µm thickness on a glass substrate of 1.0 mm thickness in dimension 25.0x50.0 mm2. For preliminary test, a module was used to thermoelectric power generation. It was found that the open circuit voltage increased with increasing temperature difference from 3 mV at 5 K up to 20 mV at 78 K. The internal resistance of a module reached a value of 14.52 MΩ. This test indicated that a module can be generated the electrical power. Therefore, it can be used as an important platform for further thin films thermoelectric module research.


2010 ◽  
Vol 39 (9) ◽  
pp. 1395-1398 ◽  
Author(s):  
K. Rothe ◽  
M. Stordeur ◽  
H. S. Leipner
Keyword(s):  

2012 ◽  
Vol 185 ◽  
pp. 9-11 ◽  
Author(s):  
Qi Zhen Peng ◽  
Ye Ko San ◽  
Samuel Khong ◽  
Jonathan Sim ◽  
Santhiagu Ezhilvalavan ◽  
...  

Bi2Te3and its solid solution remain the state-of-the-art thermoelectric materials for refrigeration applications in microelectronics industry, such as dissipating the heat generated by various devices. The fabrication method and associated processing parameters are to be optimised to get desirable composition exhibiting better electrical and thermal transport properties. Carrier concentration and mobility are found to be crucial in achieving high thermoelectric cooling efficiency and energy conversion. In this paper, we present the fabrication and analysis of thermoelectric thin films deposited by RF-magnetron sputtering from n-type Bi2Te2.7Se0.3and p-type Bi0.5Sb1.5Te3targets on a silicon substrate. X-ray diffraction, Scanning electron microscopy combined with energy dispersive spectrometry, electrical resistivity, Seebeck coefficient and thermal diffusivity measurements were used for the thermoelectric thin films characterization. We studied the effect of sputtering process parameters, on the structural, electrical and thermal transport characteristics of films. The observed results demonstrate both n-and p-type doped Bi2Te3films exhibit desirable properties and could be potential candidates for thermoelectric micro-cooler applications.


2020 ◽  
Vol 127 (24) ◽  
pp. 245304
Author(s):  
Ngan Hoang Pham ◽  
Örjan Vallin ◽  
J. Panda ◽  
M. Venkata Kamalakar ◽  
Junji Guo ◽  
...  

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