Effects of post-deposition annealing temperature and ambient on RF magnetron sputtered Sm2O3 gate on n-type silicon substrate

2011 ◽  
Vol 22 (12) ◽  
pp. 1816-1826 ◽  
Author(s):  
Wen Chiao Chin ◽  
Kuan Yew Cheong
Keyword(s):  
Silicon Substrate ◽  
Annealing Temperature ◽  
Post Deposition Annealing ◽  
Type Silicon ◽  
Post Deposition

Effects of Oxygen and Forming Gas Annealing on ZnO TFTs

2011 ◽  
Vol 1287 ◽  
Author(s):  
Jiaye Huang ◽  
Ujwal Radhakrishna ◽  
Martin Lemberger ◽  
Michael P.M. Jank ◽  
Sebastian Polster ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Morphological Changes ◽  
Electrical Characteristics ◽  
Electrical Parameters ◽  
Post Deposition Annealing ◽  
Oxygen Annealing ◽  
Hydrogen Incorporation ◽  
Post Deposition ◽  
Additional Hydrogen ◽  
Bottom Gate

ABSTRACTZnO TFTs with bottom gate top S/D contact architecture were fabricated by sputtering of ZnO with layer thicknesses from 30 nm to 100 nm. The effect of post deposition annealing in oxygen and forming gas atmospheres at 400°C to 500°C on the devices was investigated. The tendencies of a lower threshold voltage Vth and a higher saturation mobility μsat for higher annealing temperature can be observed for both oxygen and forming gas annealing. Reduction of trap density in oxygen annealing and additional hydrogen incorporation in forming gas annealing play an important role for these electrical parameters. Morphological changes of increased grain size and fewer grain boundaries in the channel also contribute to tendencies in electrical characteristics of ZnO TFTs.

Effect of Post Deposition Annealing on the Characteristics of Sol-Gel Derived HfO2 on 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 545-548 ◽  
Author(s):  
Chee Chung Hoong ◽  
Kuan Yew Cheong
Keyword(s):  
Annealing Temperature ◽  
Sol Gel ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Post Deposition Annealing ◽  
Different Temperatures ◽  
Effective Oxide Charge ◽  
Post Deposition

The effects of post deposition annealing in forming gas (5 % H2 in 95 % N2) ambient at different temperatures (850, 950, and 1050 oC) on metal-oxide-semiconductor characteristics of sol-gel derived HfO2 gate on n-type 4H-SiC have been investigated. After 30 min of the annealing, an accumulation of positive effective oxide charge (Qeff) has been observed in all samples. The total interface trap density and Qeff of the oxides annealed at 850 and 950 oC are comparable but an increment and reduction of the respective densities have been recorded when the oxide was annealed at 1050 oC. A reduction of near interface trap density has been revealed as the annealing temperature has been increased. These observation was closely related to the increment of leakage current density as the annealing temperature increased.

Post-deposition annealing temperature dependence TiO2-based EGFET pH sensor sensitivity

2016 ◽  
Author(s):  
M. A. Zulkefle ◽  
R. A. Rahman ◽  
K. A. Yusoff ◽  
W. F. H. Abdullah ◽  
M. Rusop ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Annealing Temperature ◽  
Ph Sensor ◽  
Post Deposition Annealing ◽  
Sensor Sensitivity ◽  
Post Deposition ◽  
Annealing Temperature Dependence

scholarly journals Effects of Temperature on the Structural and Optical Preperties of AgGaSe2 Thin Films

1970 ◽  
Vol 33 (2) ◽  
pp. 179-188
Author(s):  
MRA Bhuiyan ◽  
DK Saha ◽  
SM Firoz Hasan
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Visible Region ◽  
Wavelength Region ◽  
Band Gap Energy ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Glass Substrates ◽  
Academy Of Sciences ◽  
Post Deposition

In this study, AgGaSe2 (AGS) thin films were formed onto cleaned glass substrates by using the stacked elemental layer (SEL) deposition technique in vacuum. The films were prepared at the post-deposition annealing temperature from 100 to 350°C for 15 min duration. The atomic composition of the films was measured by energy dispersive analysis of X-ray (EDAX) method. The films ascertain the compositional uniformity. The X-ray diffraction (XRD) has been employed to study the structure of the films. The structures of the films are found to be polycrystalline in nature. The lattice parameters, grain size, strain and dislocation densities of the films were calculated. Optical characteristics of the films were ascertained by spectrophotometer in the photon wavelength ranging between 300 and 2500 nm. The transmittance was found to increase with the increase of annealing temperature. The transmittance falls steeply with decreasing wavelength. It revealed that AGS films have considerable absorption throughout the wavelength region from 400 to 800 nm. The optical band gap energy has been evaluated. Two possible direct allowed and direct forbidden transitions have been observed for all the AGS films in visible region. The former varied from 1.67 to 1.75 eV and the later from 2.05 to 2.08 eV, depending on the post-deposition annealing temperature of the films. DOI: 10.3329/jbas.v33i2.4101 Journal of Bangladesh Academy of Sciences, Vol. 33, No. 2, 179-188, 2009

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