Chemical bath deposition of SnS thin films on ZnS and CdS substrates

The aim of the current research was to study regularities of chemical bath deposition (CBD) of tin sulphide thin films as function of tin and sulphur concentrations in the solutions. SnS thin films were deposited onto Mo-, ITO-and TO-coated glass and onto borosilicate glass substrates at room temperature for 24 hours. The concentrations of sulphur and tin (ratio 1:1) in the deposition solution were varied from 0.01 M to 0.09 M. Films were characterized by SEM and Raman spectroscopy. The structuraly best tin mono-sulphide films with good adhesion to the substrate were deposited at concentration of consituents in solution 0.03M. The films deposited at concentration of 0.01M had non-uniform and incomplete coverage of the surface on all used substrates whereas at tin and sulphur concentrations of 0.05M and higher films were peeling off of the substrate.

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Effect of Annealing Temperature and Time on the Optical Properties of SnS Thin Films Prepared by Chemical Bath Deposition

International Journal for Innovation Education and Research ◽

10.31686/ijier.vol1.iss2.108 ◽

2013 ◽

Vol 1 (2) ◽

pp. 121-130

Author(s):

J.I Onwuemeka ◽

F.M Ezike ◽

N.C Nwulu

Keyword(s):

Thin Film ◽

Thin Films ◽

Optical Properties ◽

Band Gap ◽

Chemical Bath Deposition ◽

Complexing Agent ◽

Rutherford Back Scattering ◽

Double Beam ◽

Two Samples ◽

Sns Thin Films

A research on the deposition and Characterization of SnS Thin Films by Chemical Bath Deposition Technique using Ammonia (NH3) as a complexing agent. Thin film of Tin (II) sulphide (SnS) is deposited onto glass substrates using chemical bath deposition (CBD) at room temperature for 3hours and 1hour. The optical properties of the film were measured using Double Beam UV- Spectrophotometer with serial number UV061514, Energy dispersive X-ray florescence (EDXRF) determines the compositions together with Rutherford Back Scattering (RBS) analysis revealed that thin films have percentage compositions of the elements (Sn/S, 50.1/49.9 for 3hours and Sn/S, 50.4/49.6 for 1hour) and their thicknesses are 100nm for 3hours and 150nm for 1hour. It was found that SnS thin film exhibits p-type conduction. Optical band gap values of direct and indirect transitions are estimated to be 1.98eV to 2.01eV and 1.82eV to 1.98eV for the two samples respectively. The other optical properties calculated from transmittance using appropriate equations are absorbance, reflectance, band gap , absorption coefficient, optical conductivity, refractive index and extinction coefficient.

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Synthesis and Properties of SnS Thin Films by Chemical Bath Deposition

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.509.333 ◽

2012 ◽

Vol 509 ◽

pp. 333-338 ◽

Cited By ~ 5

Author(s):

Dong Lin Xia ◽

Jun Xu ◽

Wen Qing Shi ◽

Pan Lei ◽

Xiu Jian Zhao

Keyword(s):

Thin Films ◽

Chemical Bath Deposition ◽

Precursor Solution ◽

Xrd Analysis ◽

Crystallographic Structure ◽

X Ray Diffraction ◽

Buffer Solution ◽

Chloride Dihydrate ◽

Structure Morphology ◽

Sns Thin Films

Tin sulphide (SnS) thin films have been deposited on glass substrate by chemical bath deposition. The precursor solution was prepared from tin (II) chloride dihydrate, thioacetamide. Triethanolamine, ammonia and ammonium chloride were used as complexant, solvent and buffer solution, respectively. The crystallographic structure, morphology and optical properties were characterized by X-ray diffraction (XRD), scanning electron microscopy and UV-Vis spectrophotometer. XRD analysis shows that SnS thin films were polycrystalline and had orthorhombic structure, and SEM micrographs reveal that SnS thin films were densely packed surface coverage and consists of large flowerlike grains. SnS thin films with the optical bandgap of 1.3 eV were achieved at 300 °C.

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