Low-temperature sintering of high potential gradient B2O3-doped ZnO varistors

2015 ◽  
Vol 26 (7) ◽  
pp. 4997-5000 ◽  
Author(s):  
Zhijun Xu ◽  
Shuai Ma ◽  
Ruiqing Chu ◽  
Jigong Hao ◽  
Lihong Cheng ◽  
...  
2009 ◽  
Vol 23 (25) ◽  
pp. 3013-3022 ◽  
Author(s):  
LEI KE ◽  
DONG-MEI JIANG ◽  
CHUN-XIA WANG ◽  
XUE-MING MA

A high potential gradient of ZnO varistors were fabricated by Y 2 O 3-doping and low-temperature sintering. The value of the potential gradient increased to 2460.5 V/mm with the Y 2 O 3 content of 0.08 mol% and the sintering temperature of 800°C. The effects of Y 2 O 3-doping and sintering temperature on the electrical properties of ZnO varistors were investigated. Under the given experimental conditions, additive Y 2 O 3 exists in the form of Y 2 O 3 phase after sintering at 800°C. High-energy ball-milling in the early period of the experiment induced the grain refinement and realized the sintering formation at the lower temperature of 800°C. Both Y 2 O 3-doping and low-temperature sintering restrained the ZnO grain growth and increased the potential gradient.


2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Lei Ke ◽  
Ming Hu ◽  
Xueming Ma

The effects of rare-earth doping and low-temperature sintering on electrical properties of ZnO varistors were investigated. The potential gradient (E1mA) of the ZnO varistors increased significantly to 2247.2 V/mm after doping 0.08 mol% of Y2O3 and sintering at 800°C for 2 h. The notable decrease of the grain size with the given experimental conditions was the origin for the increase in E1mA. During the process of high-temperature sintering, both the oxygen at the grain boundary interface and the neutralisation of the ions on the depletion layer were directly reduced, which caused the weight loss and the internal derangement of double Schottky barriers.


2014 ◽  
Vol 25 (9) ◽  
pp. 3878-3884 ◽  
Author(s):  
Shuai Ma ◽  
Zhijun Xu ◽  
Ruiqing Chu ◽  
Jigong Hao ◽  
Lihong Cheng ◽  
...  

2019 ◽  
Vol 17 (2) ◽  
pp. 722-727
Author(s):  
Yongcheng Lu ◽  
Yuanxun Li ◽  
Rui Peng ◽  
Hua Su ◽  
Zhihua Tao ◽  
...  

2007 ◽  
Vol 18 (8) ◽  
pp. 863-868 ◽  
Author(s):  
Xiangchun Liu ◽  
Feng Gao ◽  
Lili Zhao ◽  
Changsheng Tian

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