The influence of Yttrium on leakage current and dielectric properties of amorphous Al2O3 thin film derived by sol–gel

2016 ◽  
Vol 27 (8) ◽  
pp. 7788-7794 ◽  
Author(s):  
Manwen Yao ◽  
Pei Zou ◽  
Zhen Su ◽  
Jianwen Chen ◽  
Xi Yao
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Leakage Current ◽  
Sol Gel ◽  
Amorphous Al2o3 ◽  
Al2o3 Thin Film

Dielectric Properties and Leakage Current Characteristics of Sol-Gel Derived (Ba0.5Sr0.5)TiO3:MgTiO3 Thin Film Composites

2003 ◽  
Vol 30 (5-6) ◽  
pp. 99-107 ◽  
Author(s):  
M. Jain ◽  
S. B. Majumder ◽  
Yu. Yuzyuk ◽  
R. S. Katiyar ◽  
A. S. Bhalla ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Leakage Current ◽  
Sol Gel ◽  
Current Characteristics ◽  
Thin Film Composites ◽  
Film Composites

Electrical Reliability of Solgel Barium Titanate Films on Copper Foils for Organic Package Integration

2010 ◽  
Vol 1247 ◽  
Author(s):  
Manish Kumar ◽  
Shu Xiang ◽  
P. Markondeya Raj ◽  
Isaac Robin Abothu ◽  
Jin-Hyun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Barium Titanate ◽  
Leakage Current ◽  
Sol Gel ◽  
Grain Structure ◽  
Capacitance Density ◽  
Copper Foils ◽  
Electrical Reliability

AbstractThere is an increasing need for integrating high dielectric constant ceramic thin film components in organic and 3D IC packages to lower the power-supply impedance at high frequencies and supply noise-free power to the ICs. Sol-gel approach is very attractive for high density capacitors because of its ability to precisely control the composition of the films and the ease of introducing dopants to engineer the dielectric properties such as breakdown voltages and DC leakage characteristics. Thin films on copper foils lend themselves to organic package integration with standard foil lamination techniques used in package build-up processes. However, fabrication of thin film barium titanate on copper foils is generally affected by process incompatibility during crystallization in reducing atmospheres, leading to poor crystallization, oxygen vacancies and copper diffusion through the film that degrades the electrical properties.This paper focuses on the dielectric properties and electrical reliability of thin films on copper foils. Thin film (300-400 nm) embedded capacitors with capacitance density of 2 μF/cm2, low leakage current and high breakdown voltage were fabricated via sol-gel technology and foil lamination. To lower the leakage current, the chemical composition was altered by incorporating – 1.) Excess barium 2.) Acceptor dopants such as Mn. Both approaches lowered the leakage current compared to that of pure barium titanate. SEM analysis showed enhanced densification and refined grain structure with chemistry modification. The films showed good stability in leakage currents at 150 C with an applied field strength of 100 kV/cm, demonstrating the electrical reliability of these films.

scholarly journals Dielectric properties and leakage current of MgO/(Ba0.8Sr0.2)TiO3 heterostructured films prepared by sol-gel technique

2006 ◽  
Vol 55 (4) ◽  
pp. 2069
Author(s):  
Jia Jian-Feng ◽  
Huang Kai ◽  
Pan Qing-Tao ◽  
Li Shi-Guo ◽  
He De-Yan
Keyword(s):  
Dielectric Properties ◽  
Leakage Current ◽  
Sol Gel ◽  
Gel Technique

Reduced leakage current, enhanced ferroelectric and dielectric properties in Mn-doped BiFeO3 thin film composited with TiO2 layers

2019 ◽  
Vol 45 (9) ◽  
pp. 12285-12289 ◽  
Author(s):  
Y.Z. Wang ◽  
R.R. Liu ◽  
J. Qian ◽  
X.S. Sun ◽  
Y.J. Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Leakage Current ◽  
Bifeo3 Thin Film ◽  
Mn Doped

Orientation and Dielectric Properties of Sol-Gel Derived PbTiO3 Thin Film

1999 ◽  
Vol 169-170 ◽  
pp. 127-130
Author(s):  
Toshiyuki Hirano ◽  
Yoshiyuki Kondo ◽  
Hisao Suzuki ◽  
Syouko Ito ◽  
Saichirou Kaneko ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Sol Gel

Dielectric properties of sol–gel-derived MgO:Ba0.5Sr0.5TiO3 thin-film composites

2002 ◽  
Vol 81 (17) ◽  
pp. 3212-3214 ◽  
Author(s):  
M. Jain ◽  
S. B. Majumder ◽  
R. S. Katiyar ◽  
D. C. Agrawal ◽  
A. S. Bhalla
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Sol Gel ◽  
Thin Film Composites ◽  
Film Composites

Structure and Dielectric Properties of Mg, Cr-Doped LaSrFeO3 Films

2014 ◽  
Vol 538 ◽  
pp. 11-14
Author(s):  
Yang Lu Hou ◽  
Xing Hua Fu ◽  
Wen Hong Tao ◽  
Xin Jin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Doping Amount ◽  
Single Perovskite Phase ◽  
Pure Perovskite Phase ◽  
Mg Doped

Mg-doped LaFeO3 thin film and Mg, Cr-doped La0.5Sr0.5FeO3 thin films were prepared by the sol-gel method. The change rules of structure and dielectric properties of the films were studied by XRD, SEM, and Agilent. The dielectric properties of La0.5Sr0.5FeO3 and LaFeO3 films were improved by the substitute with Mg and Cr. The doping amount of Mg and Cr for the optimal dielectric properties of La0.5Sr0.5FeO3 films is 45mol%, 25mol%, respectively, and for LaFeO3, the doping amount of Mg is 8mol%. The observed pure perovskite phase of the doped films suggested the dissolution of Mn, Co, and Ni in La0.5Sr0.5FeO3 crystal lattice. Mg and Cr were integrate in the lattice of LaFeO3 and La0.5Sr0.5FeO3, and mineral is single perovskite phase. The surface of the film is smooth, without cracks, surface grain size distribution and had uniform grain size.

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