Reduced leakage current, enhanced ferroelectric and dielectric properties in Mn-doped BiFeO3 thin film composited with TiO2 layers

2019 ◽  
Vol 45 (9) ◽  
pp. 12285-12289 ◽  
Author(s):  
Y.Z. Wang ◽  
R.R. Liu ◽  
J. Qian ◽  
X.S. Sun ◽  
Y.J. Han ◽  
...  
2008 ◽  
Vol 92 (12) ◽  
pp. 122903 ◽  
Author(s):  
Guo-Zhen Liu ◽  
Can Wang ◽  
Chun-Chang Wang ◽  
Jie Qiu ◽  
Meng He ◽  
...  

2016 ◽  
Vol 78 (3) ◽  
pp. 559-565 ◽  
Author(s):  
P. P. Lv ◽  
C. H. Yang ◽  
F. J. Geng ◽  
C. Feng ◽  
X. M. Jiang ◽  
...  

2009 ◽  
Vol 80 (11) ◽  
pp. 114701 ◽  
Author(s):  
Xiao-Yu Zhang ◽  
Xuan-Cong Wang ◽  
Feng Xu ◽  
Yun-Gui Ma ◽  
C. K. Ong

Vacuum ◽  
2017 ◽  
Vol 146 ◽  
pp. 221-224 ◽  
Author(s):  
Rahul Barman ◽  
Davinder Kaur

2003 ◽  
Vol 30 (5-6) ◽  
pp. 99-107 ◽  
Author(s):  
M. Jain ◽  
S. B. Majumder ◽  
Yu. Yuzyuk ◽  
R. S. Katiyar ◽  
A. S. Bhalla ◽  
...  

2013 ◽  
Vol 566 ◽  
pp. 277-280
Author(s):  
Yoko Takezawa ◽  
Minoru Ryu ◽  
Yoshiki Iwazaki ◽  
Toshimasa Suzuki ◽  
Youichi Mizuno ◽  
...  

Highly crystallized BaTiO3 thin films were fabricated by a nanocrystal sintering process. Boron alkoxide was introduced into a slurry of Mn-doped BaTiO3 nanocrystals with particle sizes of 5-7 nm. The deposited nanocrystal film on a (111)-oriented Pt/TiO2/Al2O3 substrate was sintered at a low temperature of 800 °C and the obtained film had highly densified and oriented microstructures. We found that the boron additive enhanced the grain growth of nanoparticles and as a result the dielectric constant of the thin film increased to 1100 at 10 kHz, which is much higher than that of undoped BaTiO3 thin films.


Sign in / Sign up

Export Citation Format

Share Document