Structure and Dielectric Properties of Mg, Cr-Doped LaSrFeO3 Films

2014 ◽  
Vol 538 ◽  
pp. 11-14
Author(s):  
Yang Lu Hou ◽  
Xing Hua Fu ◽  
Wen Hong Tao ◽  
Xin Jin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Doping Amount ◽  
Single Perovskite Phase ◽  
Pure Perovskite Phase ◽  
Mg Doped

Mg-doped LaFeO3 thin film and Mg, Cr-doped La0.5Sr0.5FeO3 thin films were prepared by the sol-gel method. The change rules of structure and dielectric properties of the films were studied by XRD, SEM, and Agilent. The dielectric properties of La0.5Sr0.5FeO3 and LaFeO3 films were improved by the substitute with Mg and Cr. The doping amount of Mg and Cr for the optimal dielectric properties of La0.5Sr0.5FeO3 films is 45mol%, 25mol%, respectively, and for LaFeO3, the doping amount of Mg is 8mol%. The observed pure perovskite phase of the doped films suggested the dissolution of Mn, Co, and Ni in La0.5Sr0.5FeO3 crystal lattice. Mg and Cr were integrate in the lattice of LaFeO3 and La0.5Sr0.5FeO3, and mineral is single perovskite phase. The surface of the film is smooth, without cracks, surface grain size distribution and had uniform grain size.

Structure and Dielectric Properties of Mn, Co, and Ni-Doped LaSrFeO3 Films

2013 ◽  
Vol 575-576 ◽  
pp. 499-503
Author(s):  
Bin Fu ◽  
Yang Lu Hou ◽  
Wei Bing Wu ◽  
Xing Hua Fu
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Dielectric Properties ◽  
Smooth Surface ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Electrical Measurements ◽  
Doping Amount ◽  
Pure Perovskite Phase ◽  
Gel Technique

Mn, Co, and Ni-doped La0.5Sr0.5FeO3thin films were prepared by the sol-gel technique. The structure and dielectric properties of the films were studied by XRD, SEM, and electrical measurements. The morphology observation demonstrated these films had uniform grain size and smooth surface. The dielectric properties of La0.5Sr0.5FeO3films were improved by the replacement of Fe with Mn, Co, and Ni. The doping amount of Mn, Co, and Ni for the optimal dielectric properties of La0.5Sr0.5FeO3films is 5%, 2%, and 3%, respectively. The observed pure perovskite phase of the doped films suggested the dissolution of Mn, Co, and Ni in La0.5Sr0.5FeO3crystal lattice.

Dielectric Properties of Mn, Co, and Ni-Doped LaSrFeO3 Films with Different Annealing Atmosphere

2015 ◽  
Vol 740 ◽  
pp. 28-31
Author(s):  
Yang Lu Hou ◽  
Xing Hua Fu ◽  
Wen Hong Tao ◽  
Hong Di Xue
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Film Surface ◽  
Annealing Atmosphere ◽  
Single Perovskite Phase ◽  
Gel Technique

Mn, Co, and Ni-doped La0.5Sr0.5FeO3 thin films were prepared by the sol-gel technique with different annesling atmosphere. The structure and dielectric properties of the films were researched by XRD, SEM and Agilent. The study found that LSF-Mn (Co, Ni) films under the argon annealing atmosphere were have optimal dielectric properties. And Mn, Co, Ni elements are integrated into La0.5Sr0.5FeO3 lattices with the single perovskite phase. And uniform grain was distribution on the film surface.

Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 336-338 ◽  
pp. 283-286 ◽  
Author(s):  
Zan Zheng ◽  
Xiao Ting Li ◽  
Gao Rong Han ◽  
Wen Jian Weng ◽  
Pi Yi Du
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Phase Structure ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Dip Coating ◽  
In Doping ◽  
Ito Glass ◽  
Coating Method ◽  
Dip Coating Method

(PbySr1-y)ZnxTi1-xO3-x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology, and dielectric properties of thin films were investigated by XRD, SEM and impedance analyzer, respectively. The perovskite phase structure was exhibited in the Zn-doped PST thin films. The formation ability of the thin films of the perovskite phase and its grain size decreased with the increase in doping Zn. The dielectric constant of the thin film was influenced by oxygen vacancies which could be controlled by Zn doping.

Effect of Stacking Layers on the Structure and Properties of Ca(Mg1/3Nb2/3)O3 / CaTiO3 Thin Films

2009 ◽  
Vol 421-422 ◽  
pp. 115-118
Author(s):  
Jing Zhou ◽  
Jie Zhu ◽  
Wen Chen ◽  
Jie Shen ◽  
Qiong Lei ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Perovskite Phase ◽  
Pechini Method ◽  
Second Phase ◽  
Structure And Properties ◽  
Dense Microstructure ◽  
Microwave Dielectric ◽  
Pure Perovskite Phase ◽  
Film Layer

Effect of stacking layers on the structure and properties of Ca(Mg1/3Nb2/3)O3/CaTiO3 (CMN/CT) microwave dielectric heterogeneous thin films prepared was investigated. Precursor solutions for CMN and CT synthesis were obtained by Pechini method. The arrangement pattern has affected structure and properties of heterogeneous thin film. The CMN-CT arrangement heterostructure thin film has second phase from the CMN films layer. The CT-CMN heterostructure film which has a smooth and dense microstructure was composed of pure perovskite phase without any second phase, this result was attributed to the CT film layer which is a buffer layer between substrate and CMN film layer. At 1MHz frequency, CT-CMN exhibits the dielectric properties of εr=47.5, tanδ=0.020.

Oxygen Sensitivity of SrFeO3-δ Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 280-283 ◽  
pp. 315-318 ◽  
Author(s):  
Chong Liang ◽  
De An Yang ◽  
Jian Jing Song ◽  
Ming Xia Xu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Alumina Substrate ◽  
Oxygen Sensitivity ◽  
Coating Film ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

Sr(NO3)2, Fe(NO3)3 and citric acid (the mole ratio was 1:1:2) were mixed in water to form sol. Alumina substrate, which had been treated by ultrasonic cleaner, were dipped in the sol and pulled out, and the coating film was heated for 1h at 900oC. Through seventeen times treatment, SrFeO3-d thin film was coated on the alumina substrate. The remainder sol was dried and heated at 400oC, 800oC, 900oC for 2 h. The thin films and the powders were characterized by XRD. The morphologies of thin films were observed by SEM. The results showed that SrFeO3-δ was formed at 900oC on alumina substrate and the grain size was 100 ~ 200 nm. The oxygen sensitivity was measured in the temperature range of 377 ~ 577oC under different oxygen partial pressures. SrFeO3-δ thin film showed p-type conduction. The response time was less than 2 min when being exposed to a change from N2 to 0.466% O2 at 377oC.

Preparation of 0.90Bi0.5Na0.5TiO3-0.10BaTiO3 Ferroelectric Thin Film and its Application in Pyroelectric Energy Harvesting

2012 ◽  
Vol 485 ◽  
pp. 23-26 ◽  
Author(s):  
Xiu Cheng Zheng ◽  
Guang Ping Zheng ◽  
Zheng Lin ◽  
Zhi Yuan Jiang
Keyword(s):  
Thin Film ◽  
Energy Harvesting ◽  
Indium Tin Oxide ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Solution Process ◽  
Precursor Solution ◽  
Single Perovskite Phase ◽  
Ito Glass

Ferroelectric0.90Bi0.5Na0.5TiO3-0.10BaTiO3(0.90BNT-0.10BT) thin film with single perovskite phase is prepared using an improved sol-gel spin coating method onto indium-tin-oxide (ITO) glass substrates. A new solution process is developed for the preparation of precursor solution which is stable in air, presenting a low gelation and trend to the formation of precipitates. The as-prepared thin film is crystallized into single perovskite phase and has good ferroelectric properties. It is remarkable that the thin films show excellent heat-to-electrical energy conversion properties. The results of this work for the first time demonstrate the feasibility of using lead-free BNT-BT films for pyroelectric energy harvesting.

Annealing Effect on Morphology Optical and Crystallographic Properties of Solution-Based Cu2ZnSnS4 Thin Films

2020 ◽  
Vol 12 (3) ◽  
pp. 388-391
Author(s):  
Raees A. Gani Shaikh ◽  
Sagar A. More ◽  
Gauri G. Bisen ◽  
Sanjay S. Ghosh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Sol Gel ◽  
Crystallographic Structure ◽  
Sem Images ◽  
Promising Alternative ◽  
Coating Method ◽  
Czts Thin Films

CZTS chalcopyrite semiconductor has received attention as a promising alternative as an absorber in thin-film solar cells because of the high absorption coefficient, direct bandgap (1.5 eV), nontoxic elements and sustained high electrical and optical properties. In the present work, CZTS thin film has been developed by the sol–gel spin coating method by thermal decomposition of metal ions and thiourea complexes under ambient environment. Annealing study of the above prepared CZTS thin films has been performed. The prepared CZTS samples were annealed at different temperatures 250 °C, 275 °C, 300 °C, and 325 °C respectively. Crystallographic structure, surface morphology, and optical properties were studied. XRD pattern shows the kesterite structure of the films with characteristics peaks for planes (112), (200), (220), and (312). Crystallite size, strain and dislocation densities were calculated. Sample annealed at 300 °C shows the most intense XRD peak and hence larger grain size. Grain size tends to increase as the annealing temperature increases up to 300 °C. At 325 °C SEM images show that cracks are formed in the film. At lower temperatures uniform, homogenous, smooth and densely packed films are formed. Raman spectroscopy is used to determine phase purity because many of binary and ternary chalcogenides show XRD peaks at similar positions to that of CZTS. A single peak at 336 cm–1 shows the pure kestrite phase of CZTS for all films.

Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

2017 ◽  
Vol 727 ◽  
pp. 942-946 ◽  
Author(s):  
Juan Li ◽  
Cong Chun Zhang ◽  
Yan Lei Wang ◽  
Yang Gao ◽  
Xiao Lin Zhao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Perovskite Phase ◽  
Rf Magnetron Sputtering ◽  
Barium Strontium ◽  
Metal Insulator Metal ◽  
Bst Thin Film

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.

THICKNESS-DEPENDENT MICROSTRUCTURES AND ELECTRICAL PROPERTIES OF LiTaO3 THIN FILMS PREPARED BY A Sol-Gel PROCESS

2007 ◽  
Vol 21 (18n19) ◽  
pp. 3404-3411
Author(s):  
M. C. KAO ◽  
H. Z. CHEN ◽  
S. L. YOUNG ◽  
C. C. LIN ◽  
C. C. YU
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Relative Dielectric Constant ◽  
Coating Technology ◽  
Si Substrates ◽  
Sol Gel Process

LiTaO 3 thin films were deposited on Pt / Ti / SiO 2/ Si substrates by means of a sol-gel spin-coating technology and rapid thermal annealing (RTA). The influence of various annealing treatments on the characteristics of the thin films were studied by varying the single-annealed-layer thickness (50 ~ 200 nm ) and heating temperatures (500 ~ 800° C ) of the samples. Experimental results reveal that the single-annealed-layer strongly influences grain size, dielectricity and ferroelectricity of LiTaO 3 thin films. The grain size of LiTaO 3 thin film decreases slightly with increasing thickness of the single-annealed-layer, and highly c-axis orientated LiTaO 3 films can be obtained for a single-annealed-layer of 50 nm. When the thickness of the single-annealed-layer was increased from 50 to 200 nm, the relative dielectric constant of LiTaO 3 thin film decreased from 65 to 35, but the dielectric loss factor (tanδ) was increased. The LiTaO 3 films with the single-annealed-layer of 50 nm showed excellent ferroelectric properties in terms of a remanent polarization ( P r) of 12.3 μ C /cm2 (Ec ∼ 60 kV/cm), and a low current density of 5.2×l0-8 A /cm2 at 20 kV/cm.

Electrical Reliability of Solgel Barium Titanate Films on Copper Foils for Organic Package Integration

2010 ◽  
Vol 1247 ◽  
Author(s):  
Manish Kumar ◽  
Shu Xiang ◽  
P. Markondeya Raj ◽  
Isaac Robin Abothu ◽  
Jin-Hyun Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Barium Titanate ◽  
Leakage Current ◽  
Sol Gel ◽  
Grain Structure ◽  
Capacitance Density ◽  
Copper Foils ◽  
Electrical Reliability

AbstractThere is an increasing need for integrating high dielectric constant ceramic thin film components in organic and 3D IC packages to lower the power-supply impedance at high frequencies and supply noise-free power to the ICs. Sol-gel approach is very attractive for high density capacitors because of its ability to precisely control the composition of the films and the ease of introducing dopants to engineer the dielectric properties such as breakdown voltages and DC leakage characteristics. Thin films on copper foils lend themselves to organic package integration with standard foil lamination techniques used in package build-up processes. However, fabrication of thin film barium titanate on copper foils is generally affected by process incompatibility during crystallization in reducing atmospheres, leading to poor crystallization, oxygen vacancies and copper diffusion through the film that degrades the electrical properties.This paper focuses on the dielectric properties and electrical reliability of thin films on copper foils. Thin film (300-400 nm) embedded capacitors with capacitance density of 2 μF/cm2, low leakage current and high breakdown voltage were fabricated via sol-gel technology and foil lamination. To lower the leakage current, the chemical composition was altered by incorporating – 1.) Excess barium 2.) Acceptor dopants such as Mn. Both approaches lowered the leakage current compared to that of pure barium titanate. SEM analysis showed enhanced densification and refined grain structure with chemistry modification. The films showed good stability in leakage currents at 150 C with an applied field strength of 100 kV/cm, demonstrating the electrical reliability of these films.

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