Influence of complexing agents-aided CuInSe2 thin films by single-step electrochemical deposition and photoelectrochemical studies

2021 ◽  
Vol 32 (6) ◽  
pp. 6855-6865
Author(s):  
P. Prabukanthan ◽  
M. Sreedhar ◽  
J. Meena ◽  
M. Ilakiyalakshmi ◽  
S. Venkatesan ◽  
...  
Author(s):  
Haribhau Borate ◽  
◽  
Ajinkya Bhorde ◽  
Ashish Waghmare ◽  
Shruthi Nair ◽  
...  

2017 ◽  
Vol 22 (4) ◽  
pp. 1197-1207 ◽  
Author(s):  
T. Rajesh Kumar ◽  
P. Prabukanthan ◽  
G. Harichandran ◽  
J. Theerthagiri ◽  
Tetiana Tatarchuk ◽  
...  

2019 ◽  
Vol 497 ◽  
pp. 143794 ◽  
Author(s):  
Yousaf Hameed Khattak ◽  
Faisal Baig ◽  
Hanae Toura ◽  
Imen Harabi ◽  
Saira Beg ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chokkakula L. P. Pavithra ◽  
Reddy Kunda Siri Kiran Janardhana ◽  
Kolan Madhav Reddy ◽  
Chandrasekhar Murapaka ◽  
Joydip Joardar ◽  
...  

AbstractDiscovery of advanced soft-magnetic high entropy alloy (HEA) thin films are highly pursued to obtain unidentified functional materials. The figure of merit in current nanocrystalline HEA thin films relies in integration of a simple single-step electrochemical approach with a complex HEA system containing multiple elements with dissimilar crystal structures and large variation of melting points. A new family of Cobalt–Copper–Iron–Nickel–Zinc (Co–Cu–Fe–Ni–Zn) HEA thin films are prepared through pulse electrodeposition in aqueous medium, hosts nanocrystalline features in the range of ~ 5–20 nm having FCC and BCC dual phases. The fabricated Co–Cu–Fe–Ni–Zn HEA thin films exhibited high saturation magnetization value of ~ 82 emu/g, relatively low coercivity value of 19.5 Oe and remanent magnetization of 1.17%. Irrespective of the alloying of diamagnetic Zn and Cu with ferromagnetic Fe, Co, Ni elements, the HEA thin film has resulted in relatively high saturation magnetization which can provide useful insights for its potential unexplored applications.


Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.


2003 ◽  
Vol 15 (12) ◽  
pp. 971-974 ◽  
Author(s):  
P.S. Shah ◽  
M.B. Sigman ◽  
C.A. Stowell ◽  
K.T. Lim ◽  
K.P. Johnston ◽  
...  

2010 ◽  
Vol 15 (4) ◽  
pp. 683-688 ◽  
Author(s):  
Medhat M. Kamel ◽  
Mervat Mohamed Ibrahim

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