Single-step electrochemical deposition of Mn2+ doped FeS2 thin films on ITO conducting glass substrates: physical, electrochemical and electrocatalytic properties

2019 ◽  
Vol 30 (4) ◽  
pp. 3268-3276 ◽  
Author(s):  
P. Prabukanthan ◽  
S. Thamaraiselvi ◽  
G. Harichandran ◽  
J. Theerthagiri
Keyword(s):  
Thin Films ◽  
Electrochemical Deposition ◽  
Single Step ◽  
Electrocatalytic Properties ◽  
Glass Substrates

scholarly journals A Comparative Study of Spin Coated Transparent Conducting Thin Films of Gallium and Aluminum Doped ZnO Nanoparticles

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
A. Alkahlout
Keyword(s):  
Thin Films ◽  
Sintering Temperature ◽  
Hexagonal Structure ◽  
Single Step ◽  
Al Doping ◽  
Glass Substrates ◽  
Reducing Atmosphere ◽  
Transparent Conducting ◽  
Optimum Doping Concentration ◽  
Doping Ratio

Transparent conducting Ga:ZnO (GZO) and Al:ZnO (AZO) layers have been deposited by spin coating on glass substrates using crystalline nanoparticles redispersed in 1-propanol. The coatings have been sintered in air at 600°C for 15 min and then postannealed in a reducing atmosphere at 400°C for 90 min. The effect of Ga and Al doping on the structural, morphological, optical, and electrical properties of the obtained thin films was investigated. Both films were found to be crystalline with a hexagonal structure. A single step spin coated layer 52–56 nm thick is obtained. To increase the thickness and lower the obtained sheet resistance multilayers coatings have been used. The visible transmission of both layers is high (T>80%). The influence of the sintering temperature and the optimum doping concentration was investigated. Five layers synthesized with doping ratio of 1 mol.% and sintered at 600°C and then submitted to reducing treatment in forming gas exhibited a minimum resistivity value of 7.4 × 10−2 Ω·cm for GZO layer and 1.45 Ω·cm for AZO coating.

Single-step Electrochemical Deposition of CZTS Thin Films with Enhanced Photoactivity

2020 ◽  
Author(s):  
Haribhau Borate ◽  
◽  
Ajinkya Bhorde ◽  
Ashish Waghmare ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrochemical Deposition ◽  
Single Step ◽  
Czts Thin Films

Physicochemical and electrochemical properties of Gd3+-doped ZnSe thin films fabricated by single-step electrochemical deposition process

2017 ◽  
Vol 22 (4) ◽  
pp. 1197-1207 ◽  
Author(s):  
T. Rajesh Kumar ◽  
P. Prabukanthan ◽  
G. Harichandran ◽  
J. Theerthagiri ◽  
Tetiana Tatarchuk ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrochemical Properties ◽  
Electrochemical Deposition ◽  
Deposition Process ◽  
Single Step ◽  
Znse Thin Films

scholarly journals Single step electrochemical deposition for the fabrication of CZTS kesterite thin films for solar cells

2019 ◽  
Vol 497 ◽  
pp. 143794 ◽  
Author(s):  
Yousaf Hameed Khattak ◽  
Faisal Baig ◽  
Hanae Toura ◽  
Imen Harabi ◽  
Saira Beg ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrochemical Deposition ◽  
Single Step

scholarly journals Annealing Effect on One Step Electrodeposited CuSbSe2 Thin Films

Coatings ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 75
Author(s):  
Khadija Abouabassi ◽  
Lahoucine Atourki ◽  
Andrea Sala ◽  
Mouaad Ouafi ◽  
Lahcen Boulkaddat ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Single Step ◽  
Annealing Effect ◽  
X Ray Diffraction ◽  
Electrodeposition Technique ◽  
X Ray ◽  
Glass Substrates ◽  
Orientation Change ◽  
One Step

The purpose of this work is to study the influence of the annealing temperature on the structural, morphological, compositional and optical properties of CuSbSe2 thin films electrodeposited in a single step. CuSbSe2 thin films were grown on fluorine-doped tin oxide (FTO)/glass substrates using the aqueous electrodeposition technique, then annealed in a tube furnace under nitrogen at temperatures spanning from 250 to 500 °C. The resulting films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis, Raman spectroscopy and UV-Vis spectrophotometer. The annealing temperature plays a fundamental role on the films structural properties; in the range 250–350 °C the formation of pure CuSbSe2 phase from electrodeposited binary selenides occurs. From 400 to 500 °C, CuSbSe2 undergoes a preferential phase orientation change, as well as the increasing formation of copper-rich phases such as Cu3SbSe3 and Cu3SbSe4 due to the partial decomposition of CuSbSe2 and to the antimony losses.

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

X- ray diffraction and dielectric properties of PbSe thin films

2019 ◽  
Vol 15 (34) ◽  
pp. 1-14
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Activation ◽  
Thermal Evaporation ◽  
Thermal Activation Energy ◽  
Dielectric Constants ◽  
Conductivity Measurements ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

Sol-gel growth of Ni doped CdS on glass substrates: effect of spin coating speed and dopant concentration

2020 ◽  
Vol 10 ◽  
Author(s):  
Atefeh Nazari Setayesh ◽  
Hassan Sedghi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Rotation Speed ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Glass Substrates

Background: In this work, CdS thin films were synthesized by sol-gel method (spin coating technique) on glass substrates to investigate the optical behavior of the film. Methods: Different substrate spin coating speeds of 2400, 3000, 3600 rpm and different Ni dopant concentrations of 0 wt.%, 2.5 wt.%, 5 wt.%) were investigated. The optical properties of thin films such as refraction index, extinction coefficient, dielectric constant and optical band gap energy of the layers were discussed using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. Results: It can be deduced that substrate rotation speed and dopant concentration has influenced the optical properties of thin films. By decreasing rotation speed of the substrate which results in films with more thicknesses, more optical interferences were appeared in the results. Conclusion: The samples doped with Ni comparing to pure ones have had more optical band gap energy.

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