Effect of the Al2O3 interfacial layer thickness on the measurement temperature-induced I–V characteristics in Au/Ti/Al2O3/n-GaAs structures

Author(s):  
Abdulmecit Turut ◽  
Abdulkerim Karabulut ◽  
Hasan Efeoǧlu
2021 ◽  
Vol 1070 (1) ◽  
pp. 012081
Author(s):  
Vibhu Goyal ◽  
Shubham Tayal ◽  
Shweta Meena ◽  
Ravi Gupta

2011 ◽  
Vol 88 (7) ◽  
pp. 1533-1536 ◽  
Author(s):  
R. Zhang ◽  
T. Iwasaki ◽  
N. Taoka ◽  
M. Takenaka ◽  
S. Takagi

2004 ◽  
Vol 37 (4) ◽  
pp. 643-651 ◽  
Author(s):  
Man-Ho Kim

An analytical method to estimate the thickness of the interface between two phases from small-angle scattering (SAS) data has been developed using Porod's law modified by a triangular smoothing function. The convolution with a `top-hat' function describing a sharp density profile results in a semi-sigmoidal density profile. This analytical method allows an interfacial layer thickness to be estimated from the negative slope of a Porod plot. The interfacial layer thickness (T) obtained from this model is related to similar models, namely a linear (E) and a sigmoidal density profile (σ) model, as follows:T= 21/2E= 2(61/2)σ, where σ is the standard deviation of the Gaussian function and does not represent the boundary thickness itself. The interfacial layer thickness obtained from any convolution method is a model-dependent parameter.


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