High-performance a-IGZO-based flexible TTFT with stacked dielectric layers via ultrathin high-κ SrTiO3 buffer layer grown on HfO2

2022 ◽  
Author(s):  
Caglar Ozer ◽  
M. Faruk Ebeoglugil ◽  
Serdar Yildirim ◽  
Metin Nil
Keyword(s):  
Buffer Layer ◽  
High Performance ◽  
Dielectric Layers

Carrier Dynamics and Defects in Bulk 1eV InGaAsNSb Materials and InGaAs Layers with MBL Grown by MOVPE for Multi-junction Solar Cells

2013 ◽  
Vol 1493 ◽  
pp. 245-251 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
William Lotshaw ◽  
Steven C. Moss ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Triple Junction ◽  
Gaas Substrate ◽  
High Performance ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Metamorphic Buffer ◽  
Lattice Matched

ABSTRACTMulti-junction III-V solar cells are based on a triple-junction design that employs a 1eV bottom junction grown on the GaAs substrate with a GaAs middle junction and a lattice-matched InGaP top junction. There are two possible approaches implementing the triple-junction design. The first approach is to utilize lattice-matched dilute nitride materials such as InGaAsN(Sb) and the second approach is to utilize lattice-mismatched InGaAs employing a metamorphic buffer layer (MBL). Both approaches have a potential to achieve high performance triple-junction solar cells. A record efficiency of 43.5% was achieved from multi-junction solar cells using the first approach [1] and the solar cells using the second approach yielded an efficiency of 41.1% [2]. We studied carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells.

Organic-Oxide Cathode Buffer Layer in Fabricating High-Performance Polymer Light-Emitting Diodes

2008 ◽  
Vol 18 (19) ◽  
pp. 3036-3042 ◽  
Author(s):  
Tsung-Hsun Lee ◽  
Jung-Chun-Andrew Huang ◽  
Georgi L'vovich Pakhomov ◽  
Tzung-Fang Guo ◽  
Ten-Chin Wen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Oxide Cathode ◽  
High Performance Polymer ◽  
Polymer Light Emitting Diodes ◽  
Cathode Buffer Layer

Metal Sputtering Buffer Layer for High Performance Si-Based Water Oxidation Photoanode

2020 ◽  
Vol 3 (9) ◽  
pp. 8216-8223
Author(s):  
Chang Zhao ◽  
Beidou Guo ◽  
Guancai Xie ◽  
Chengcheng Li ◽  
Wenjing Xie ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Water Oxidation ◽  
High Performance

[6,6]-Phenyl-C61-Butyric Acid Dimethylamino Ester as a Cathode Buffer Layer for High-Performance Polymer Solar Cells

2013 ◽  
Vol 3 (12) ◽  
pp. 1569-1574 ◽  
Author(s):  
Shusheng Li ◽  
Ming Lei ◽  
Menglan Lv ◽  
Scott E. Watkins ◽  
Zhan'ao Tan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Butyric Acid ◽  
High Performance ◽  
Polymer Solar Cells ◽  
High Performance Polymer ◽  
Cathode Buffer Layer

High-Performance AlGaN/GaN Schottky Diodes With an AlGaN/AlN Buffer Layer

2011 ◽  
Vol 32 (11) ◽  
pp. 1519-1521 ◽  
Author(s):  
Geng-Yen Lee ◽  
Hsueh-Hsing Liu ◽  
Jen-Inn Chyi
Keyword(s):  
Buffer Layer ◽  
High Performance ◽  
Schottky Diodes ◽  
Aln Buffer

Room temperature solution processed tungsten carbide as an efficient hole extraction layer for organic photovoltaics

2014 ◽  
Vol 2 (11) ◽  
pp. 3734-3740 ◽  
Author(s):  
Wei Cui ◽  
Zhongwei Wu ◽  
Changhai Liu ◽  
Mingxing Wu ◽  
Tingli Ma ◽  
...  
Keyword(s):  
Solar Cell ◽  
Tungsten Carbide ◽  
Buffer Layer ◽  
Organic Photovoltaics ◽  
Organic Solar Cell ◽  
High Performance ◽  
Room Temperature ◽  
Solution Processed ◽  
Anode Buffer Layer ◽  
Temperature Solution

We demonstrated tungsten carbide (WC) as an efficient anode buffer layer for a high-performance inverted organic solar cell.

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