scholarly journals Retraction Note to: A Review on Nanoporous Gallium Nitride (NPGaN) Formation on P-Type Silicon Substrate with the Mather-type Plasma Focus Device (MPFD)

2018 ◽  
Vol 28 (4) ◽  
pp. 1671-1671
Author(s):  
S. Sharifi Malvajerdi ◽  
A. Salar Elahi
Keyword(s):  
Gallium Nitride ◽  
Plasma Focus ◽  
Silicon Substrate ◽  
Plasma Focus Device ◽  
Type Silicon ◽  
P Type

A novel technique based on a plasma focus device for nano-porous gallium nitride formation on P-type silicon

2017 ◽  
Vol 24 (4) ◽  
pp. 043511
Author(s):  
S. Sharifi Malvajerdi ◽  
A. Salar Elahi ◽  
M. Habibi
Keyword(s):  
Gallium Nitride ◽  
Plasma Focus ◽  
Plasma Focus Device ◽  
Novel Technique ◽  
Type Silicon ◽  
Nitride Formation ◽  
P Type

Optical characterization of Ba0.5Sr0.5TiO3 material grown on a p-type silicon substrate (111) doped niobium oxide and chlorophyll

2020 ◽  
Vol 568 (1) ◽  
pp. 62-70
Author(s):  
Aep Setiawan ◽  
Endah Kinarya Palupi ◽  
Rofiqul Umam ◽  
Husin Alatas ◽  
Irzaman
Keyword(s):  
Silicon Substrate ◽  
Niobium Oxide ◽  
Optical Characterization ◽  
Type Silicon ◽  
P Type

Study of nanoparticles TiO2 thin films on p-type silicon substrate using different alcoholic solvents

2016 ◽  
Author(s):  
A. K. M. Muaz ◽  
U. Hashim ◽  
M. K. Md. Arshad ◽  
A. R. Ruslinda ◽  
R. M. Ayub ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Tio2 Thin Films ◽  
Type Silicon ◽  
P Type

Influence of Hf and H2O2 on Morphology of Silicon Formed by Ag Assisted Chemical Etching

2014 ◽  
Vol 953-954 ◽  
pp. 1045-1048
Author(s):  
Guo Feng Ma ◽  
Heng Ye ◽  
Hong Lin Zhang ◽  
Chun Lin He ◽  
Li Na Sun
Keyword(s):  
Silicon Substrate ◽  
Room Temperature ◽  
Electroless Deposition ◽  
Metal Salt ◽  
Substrate Surface ◽  
Volume Ratio ◽  
Type Silicon ◽  
P Type ◽  
Silicon Substrate Surface ◽  
Si Wafer

The Ag-assisted electroless etching of p-type silicon substrate in HF/H2O2solution at room temperature was investigated. In this work, the effects of HF, H2O2and their volume ratio on morphology and growth of p-type silicon substrate surface by using metal assisted etching were investigated in order to produce a highly efficient antireflecting structure. The Ag metal particles were deposited onto Si wafer by electroless deposition from a metal salt solution including HF. The experimental results show that the growth rate and morphology of the pores formed on the Ag metalized Si surfaces are strongly dependent on the volume ratio of HF and H2O2.

Ultra-thin porous anodic alumina films with self-ordered cylindrical vertical pores on a p-type silicon substrate

2004 ◽  
Vol 16 (1) ◽  
pp. 103-106 ◽  
Author(s):  
M Kokonou ◽  
A G Nassiopoulou ◽  
K P Giannakopoulos
Keyword(s):  
Silicon Substrate ◽  
Anodic Alumina ◽  
Porous Anodic Alumina ◽  
Alumina Films ◽  
Type Silicon ◽  
P Type

scholarly journals The performance of Y2O3 as interface layer between La2O3 and p-type silicon substrate

AIP Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 115309 ◽  
Author(s):  
Shulong Wang ◽  
Yuhai Chen ◽  
Hongxia Liu ◽  
Hailin Zhang
Keyword(s):  
Silicon Substrate ◽  
Interface Layer ◽  
Type Silicon ◽  
P Type

Growth of p-type ZnO thin film on n-type silicon substrate and its application as hybrid homojunction

2011 ◽  
Vol 11 (1) ◽  
pp. 65-69 ◽  
Author(s):  
Manoj Kumar ◽  
Jyoti Prakash Kar ◽  
In-Soo Kim ◽  
Se-Young Choi ◽  
Jae-Min Myoung
Keyword(s):  
Thin Film ◽  
Silicon Substrate ◽  
Zno Thin Film ◽  
Type Silicon ◽  
P Type
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