Study of nanoparticles TiO2 thin films on p-type silicon substrate using different alcoholic solvents

2016 ◽  
Author(s):  
A. K. M. Muaz ◽  
U. Hashim ◽  
M. K. Md. Arshad ◽  
A. R. Ruslinda ◽  
R. M. Ayub ◽  
...  
2018 ◽  
Vol 09 (02) ◽  
pp. 259-272
Author(s):  
Rémi Ndioukane ◽  
Moussa Touré ◽  
Diouma Kobor ◽  
Laurence Motte ◽  
Marcel Pasquinelli ◽  
...  

1995 ◽  
Vol 142 (11) ◽  
pp. 3889-3892 ◽  
Author(s):  
C. Wisniewski ◽  
I. Denicoló ◽  
I. A. Hümmelgen

2020 ◽  
Vol 568 (1) ◽  
pp. 62-70
Author(s):  
Aep Setiawan ◽  
Endah Kinarya Palupi ◽  
Rofiqul Umam ◽  
Husin Alatas ◽  
Irzaman

2016 ◽  
Vol 34 (3) ◽  
pp. 676-683 ◽  
Author(s):  
R. Skonieczny ◽  
P. Popielarski ◽  
W. Bała ◽  
K. Fabisiak ◽  
K. Paprocki ◽  
...  

AbstractThe cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.


2014 ◽  
Vol 953-954 ◽  
pp. 1045-1048
Author(s):  
Guo Feng Ma ◽  
Heng Ye ◽  
Hong Lin Zhang ◽  
Chun Lin He ◽  
Li Na Sun

The Ag-assisted electroless etching of p-type silicon substrate in HF/H2O2solution at room temperature was investigated. In this work, the effects of HF, H2O2and their volume ratio on morphology and growth of p-type silicon substrate surface by using metal assisted etching were investigated in order to produce a highly efficient antireflecting structure. The Ag metal particles were deposited onto Si wafer by electroless deposition from a metal salt solution including HF. The experimental results show that the growth rate and morphology of the pores formed on the Ag metalized Si surfaces are strongly dependent on the volume ratio of HF and H2O2.


2004 ◽  
Vol 16 (1) ◽  
pp. 103-106 ◽  
Author(s):  
M Kokonou ◽  
A G Nassiopoulou ◽  
K P Giannakopoulos

Sign in / Sign up

Export Citation Format

Share Document