Preparation of High-Quality Conductive La0.7Sr0.3MnO3 Buffer Layer Applied to Low-Cost YBCO-Coated Conductors

2020 ◽  
Vol 33 (7) ◽  
pp. 2165-2169
Author(s):  
Heng Li ◽  
Xin Zhang ◽  
Yudong Xia ◽  
Xifeng Pan ◽  
Jinfang Peng ◽  
...  
2008 ◽  
Vol 97 ◽  
pp. 012197
Author(s):  
E Gilioli ◽  
M Baldini ◽  
M Bindi ◽  
F Bissoli ◽  
D Calestani ◽  
...  

2001 ◽  
Vol 689 ◽  
Author(s):  
Shara S. Shoup ◽  
Marvis K. White ◽  
Steve L. Krebs ◽  
Natalie Darnell ◽  
Adam C. King ◽  
...  

ABSTRACTThe innovative Combustion Chemical Vapor Deposition (CCVD) process is a non-vacuum technique that is being investigated to enable next generation products in several application areas including high-temperature superconductors (HTS). In combination with the Rolling Assisted Biaxially Textured Substrate (RABiTS) technology, the CCVD process has significant promise to provide low-cost, high-quality lengths of YBCO coated conductor. The CCVD technology has been used to deposit both buffer layer coatings as well as YBCO superconducting layers. A buffer layer architecture of strontium titanate and ceria have been deposited by CCVD on textured nickel substrates and optimized to appropriate thicknesses and microstructures to provide templates for growing PLD YBCO with high critical current density values. The CCVD buffer layers have been scaled to meter plus lengths with good epitaxial uniformity along the length. A short sample cut from one of the lengths enabled high critical current density PLD YBCO. Films of CCVD YBCO superconductors have been grown on single crystal substrates with critical current densities over 1 MA/cm2. Work is currently in progress to combine both the buffer layer and superconductor technologies to produce high-quality coupons of HTS tape made entirely by the non-vacuum CCVD process.


MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2947-2952
Author(s):  
L. Chen ◽  
Z.-H. Lu ◽  
T.-M. Lu ◽  
I. Bhat ◽  
S.B. Zhang ◽  
...  

ABSTRACTEpitaxial Ge films are useful as a substrate for high-efficiency solar cell applications. It is possible to grow epitaxial Ge films on low cost, cube textured Ni(001) sheets using CaF2(001) as a buffer layer. Transmission electron microscopy (TEM) analysis indicates that the CaF2(001) lattice has a 45o in-plane rotation relative to the Ni(001) lattice. The in-plane epitaxy relationships are CaF2[110]//Ni[100] and CaF2[$\bar 1$10]//Ni[010]. Energy dispersive spectroscopy (EDS) shows a sharp interface between Ge/CaF2 as well as between CaF2/Ni. Electron backscatter diffraction (EBSD) shows that the Ge(001) film has a large grain size (∼50 μm) with small angle grain boundaries (< 8o). The epitaxial Ge thin film has the potential to be used as a substrate to grow high quality III-V and II-VI semiconductors for optoelectronic applications.


2010 ◽  
Vol 470 (5-6) ◽  
pp. 352-356 ◽  
Author(s):  
M. Parans Paranthaman ◽  
S. Sathyamurthy ◽  
Xiaoping Li ◽  
E.D. Specht ◽  
S.H. Wee ◽  
...  

2006 ◽  
Vol 19 (10) ◽  
pp. 1068-1072 ◽  
Author(s):  
Jie Xiong ◽  
Yin Chen ◽  
Yang Qiu ◽  
Bowan Tao ◽  
Wenfeng Qin ◽  
...  

2001 ◽  
Vol 11 (1) ◽  
pp. 3359-3364 ◽  
Author(s):  
T.G. Holesinger ◽  
S.R. Foltyn ◽  
P.N. Arendt ◽  
Quanxi Jia ◽  
P.C. Dowden ◽  
...  

2015 ◽  
Vol 1105 ◽  
pp. 195-199
Author(s):  
Yi Chen Meng ◽  
Hong Li Suo ◽  
Hui Tian ◽  
Lin Ma ◽  
Yi Wang ◽  
...  

The high critical current density of YBCO-coated conductors prepared by rolling assisted biaxially textured substrate technic is mostly based on the high quality cube-textured substrates. In this paper, the effect of initial grain size of ingot on the microstructure and texture evolutions during cold rolling has been investigated in high alloyed Ni8W ingots, which can affect the cube texture formation in Ni8W alloy substrates subsequently. Finally, high quality cube texture had been obtained in Ni8W alloy substrate with fine initial grain size prepared by advanced SPS technology.


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