Effects of magnetic field and spin-orbit interaction on energy levels in 1D quantum wire: analytical solution

2012 ◽  
Vol 44 (8-9) ◽  
pp. 425-436 ◽  
Author(s):  
A. Gharaati ◽  
R. Khordad
Author(s):  
Manoj Kumar ◽  
Pradip Kumar Jha ◽  
Aranya B. Bhattacherjee

Here, the influence of external magnetic field on the optical absorption and refractive index changes for a parabolically confined quantum dot in the presence of Rashba spin orbit interaction have been investigated. The results are presented as a function of quantum confinement potential, magnetic field, Rashba spin orbit interaction strength and photon energy. Our results indicate the important influence of magnetic field on the peak positions of absorption coefficient and refractive index changes. For Quantum Wire, the energy dispersion relations are studied of the spin split subbands subjected to external transverse electric and magnetic fields in the presence of Rashba spin orbit interaction. For an infinite superlattice wire, it is found that the energy gaps between different subbands are shifted due to Rashba spin orbit interaction and external electric field. Here we have also investigated the influence of external electric field and magnetic field on the optical absorption of a parabolic confinement wire.


2009 ◽  
Vol 87 (10) ◽  
pp. 1059-1064
Author(s):  
S. C. Joshi

By extending the study of dyonic harmonic oscillator and dyonium in the presence of an external magnetic field, the possibility of observation of dyons has been explored. The splitting in energy levels of dyonium under the influence of a weak magnetic field has been undertaken with inclusion of spin-orbit interaction, and it is observed that the energy level splits into nondegenerate as well doubly degenerate states. The effect of a strong magnetic field on dyonium has also been carried out by treating spin-orbit interaction as a perturbation, leading to interesting results.


Author(s):  
J. Nitta

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.


1974 ◽  
Vol 29 (1) ◽  
pp. 31-41 ◽  
Author(s):  
E. König ◽  
S. Kremer

The complete ligand field -Coulomb repulsion -spin orbit interaction matrices have been derived for the d4 and d6 electron configurations within octahedral (Oh) and tetrahedral (Td) symmetry. The calculations were perform ed in both the weak-field and strong-field coupling schemes and complete agreement of the results was achieved. The energy matrices are parametrically dependent on ligand field (Dq), Coulomb repulsion (B, C) and spin-orbit interaction (ζ). Correct energy diagrams are presentend which display the splittings by spin-orbit perturbation as well as the effect of configuration mixing. Applications to the interpretation of optical spectral data, to the detailed behavior at the crossover of ground terms, and to complete studies in magnetism are pointed out.


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