Effects of taping on grinding quality of silicon wafers in backgrinding

Author(s):  
Zhigang Dong ◽  
Qian Zhang ◽  
Haijun Liu ◽  
Renke Kang ◽  
Shang Gao
Keyword(s):  
1992 ◽  
Vol 259 ◽  
Author(s):  
Laurent E. Kassel

ABSTRACTKOH, an anisotropic etchant of monocrystalline Si, may cause roughness and defects whose shapes are related to crystallographic orientations. This paper studies the effect of processing steps on the formation of geometric etch defects. Implantation, thermal treatment, epitaxial growth or photoresist were not the source of such defects. In the scope of this study, only unwanted damage caused geometric etch defects. This makes the observation of the wafer after KOH etch a good indicator of the quality of previous steps.


2015 ◽  
Vol 5 (4) ◽  
pp. P3064-P3068 ◽  
Author(s):  
Woo Sik Yoo ◽  
Toshikazu Ishigaki ◽  
Kitaek Kang

Author(s):  
X. J. Xin ◽  
Z. J. Pei ◽  
Wenjie Liu

Silicon is the primary semiconductor material used to fabricate microchips. The quality of microchips depends directly on the quality of starting silicon wafers. A series of processes are required to manufacture high quality silicon wafers. Surface grinding is one of the processes used to flatten the wire-sawn wafers. A major issue in grinding of wire-sawn wafers is the reduction and elimination of wire-sawing induced waviness. Several approaches (namely, combination of grinding and lapping, reduced chuck vacuum, soft-pad, and wax mounting) have been proposed to address this issue. The results of finite element analysis modeling of these approaches have shown that soft-pad grinding is the most promising approach since it is very effective in reducing the waviness and very easy to be adopted to conventional grinding environment. This paper presents a study of finite element analysis on soft-pad grinding of wire-sawn silicon wafers, covering the mechanisms of waviness reduction and the effects of pad material properties.


2010 ◽  
Author(s):  
A. Elhawil ◽  
I. Huynen ◽  
J.-P. Raskin ◽  
C. Roda Neve ◽  
B. Olbrechts ◽  
...  

Author(s):  
Yue Jiao ◽  
Jian Wu ◽  
Shuting Lei ◽  
Z. J. Pei ◽  
E. Stanley Lee

Silicon is the primary semiconductor material used to fabricate microchips. The quality of microchips depends directly on the quality of the starting silicon wafers. One of the manufacturing problems in the manufacturing of silicon wafers is the presence of waviness on the surface as a result of wire-sawn slicing. To reduce this waviness, soft-pad grinding, a patented method, is used. Many factors influence the waviness reduction capacity during soft-pad grinding. The method of finite element analysis has been used to analyze the various factors. However, the grinding process is very complicated, the various factors are very vague and difficult to define. In this research, the recently developed fuzzy-neural adaptive network, which is ideally suited for the modeling of vague phenomenon, is used to model and to improve this waviness problem. To illustrate the usefulness of the approach, the process is modeled based on simulation data. The results, even though based on some very limited data, illustrate the influences of the various factors clearly.


2010 ◽  
Vol 102-104 ◽  
pp. 762-766
Author(s):  
Hong Wen Du ◽  
Yuan Zheng Yu

With the rapid development of IC and photovoltaic industry, the requirements of larger-diameter, better productivity, higher machining accuracy and finer surface quality of silicon wafers challenge traditional wafer cutting technology. Therefore, in terms of increasing wafers’ diameter, lessening slicing thickness, reducing cutting loss and improving machining efficiency, research and application of precision cutting technology become necessary and urgent. The paper analyzes current well-developed technologies and equipments of free abrasive wire cutting in detail. It is recommended that bonded abrasive diamond wire cutting will be the development trend in the future as a highly-efficient, low material waste and environmentally friendly technology of precise cutting of silicon wafers. The paper also makes a discussion on construction, working principle, and manufacturing technology of bonded abrasive diamond wires.


2016 ◽  
Vol 701 ◽  
pp. 97-100
Author(s):  
Keiichiro Niitsu ◽  
Yu Tayama ◽  
Hidenobu Maehara ◽  
Takatoshi Kato ◽  
Ji Wang Yan

Silicon wafers are the most widely used semiconductor substrates. It has been considered that silicon wafers after chemomechanical polishing (CMP) have no subsurface defects. However, in fact, defects such as dislocation and latent microcracks will remain in the wafers if CMP is performed under unsuitable conditions. In this study, we confirmed the existence of subsurface damages at a depth of submicron level in a silicon wafer after CMP, then used a nanosecond pulsed Nd:YAG laser to repair the subsurface damages. It was found that subsurface defects were recovered to a single crystalline structure by laser irradiation without changing the surface topography. The phase transformation of silicon before and after laser irradiation was confirmed by laser Raman spectroscopy and chemical etching using saturated aqueous solution of Ca(OH)2. The findings from this study contributes to improve the quality of silicon wafers for high-performance semiconductors.


1991 ◽  
Vol 69 (3-4) ◽  
pp. 307-310 ◽  
Author(s):  
K. Touhouche ◽  
Y. Tao ◽  
A. Yelon

Silicon wafers were implanted with 6 MeV oxygen ions. A 0.8 μm amorphous buried layer was formed at ≈4.0 μm from the surface. The top silicon layer remained monocrystalline, but with some damage. Upon annealing at 1300 °C for 6 h, a 0.2 μm nearly stoichiometric oxide layer is formed for specimens implanted with 8 × 1017 O2+ cm−2, thus confirming the thermodynamic aspect of oxide growth in SIMOX (separation by implantation of oxygen) structures. The annealing restores the crystal quality of the top silicon film up to 3.5 μm, but on both sides of the buried oxide layer, bands with a high density of twins are formed.


1997 ◽  
Vol 144 (2) ◽  
pp. 622-627 ◽  
Author(s):  
E. D. Kim ◽  
S. C. Kim ◽  
J. M. Park ◽  
I. V. Grekhov ◽  
T. S. Argunova ◽  
...  

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