Performance of lead iodide nuclear radiation detectors with the introduction of rare earth elements

Open Physics ◽  
2006 ◽  
Vol 4 (1) ◽  
pp. 117-123 ◽  
Author(s):  
Mahmoud Hassan ◽  
Marie Matuchova ◽  
Karel Zdansky
Keyword(s):  
Rare Earth ◽  
Rare Earth Elements ◽  
Wide Band ◽  
Photo Luminescence ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Lead Iodide ◽  
Wide Band Gap ◽  
Temperature Radiation ◽  
Nuclear Radiation Detectors

AbstractLead iodide has been recognized as a promising material for room temperature radiation detectors. It has a wide band-gap (∼ 2.3 eV), high atomic numbers (82, 53) and it is environmentally very stable compared to mercuric iodide. Electrical and optical properties of lead iodide grown crystals purified under the influence of selected rare earth elements have been investigated. Photo-luminescence and capacitance-voltage measurements have been performed using different rare earth elements.

scholarly journals Solid solubility of rare earth elements (Nd, Eu, Tb) in In2−xSnxO3 – effect on electrical conductivity and optical properties

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande
Keyword(s):  
Electrical Conductivity ◽  
Optical Properties ◽  
Rare Earth ◽  
Rare Earth Elements ◽  
Band Gap ◽  
Solid Solubility ◽  
Wide Band ◽  
Wide Band Gap ◽  
Recent Interest ◽  
Wide Band Gap Semiconductors

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.

Rare Earth Doped Zinc Oxide Nanowires

2008 ◽  
Vol 8 (1) ◽  
pp. 244-251 ◽  
Author(s):  
S. Geburt ◽  
D. Stichtenoth ◽  
S. Müller ◽  
W. Dewald ◽  
C. Ronning ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Rare Earth ◽  
Thermal Quenching ◽  
Wide Band ◽  
Wide Band Gap ◽  
Oxide Nanowires ◽  
Defect Sites ◽  
Optical Activation ◽  
Re Elements ◽  
Rare Earth Doped

Zinc oxide (ZnO) nanowires were grown via thermal transport and subsequently doped with different concentrations of Tm, Yb, and Eu using ion implantation and post annealing. High ion fluences lead to morphology changes due to sputtering; however, freestanding nanowires become less damaged compared to those attached to substrates. No other phases like rare earth (RE) oxides were detected, no amorphization occurs in any sample, and homogeneous doping with the desired concentrations was achieved. Photoluminescence measurements demonstrate the optical activation of trivalent RE-elements and the emission of the characteristic intra-4f-luminescence of the respective RE atoms, which could be assigned according to the Dieke-diagram. An increasing RE concentration results into decreasing luminescence intensity caused by energy transfer mechanisms to non-radiative remaining implantation defect sites. Furthermore, low thermal quenching was observed due to the considerable wide band gap of ZnO.

Features of characteristics and stability of CdTe nuclear radiation detectors fabricated by laser doping technique

2008 ◽  
Author(s):  
Volodymyr A. Gnatyuk ◽  
Toru Aoki ◽  
Oleksandr I. Vlasenko ◽  
Sergiy N. Levytskyi ◽  
Yoshinori Hatanaka ◽  
...  
Keyword(s):  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Laser Doping ◽  
Doping Technique ◽  
Nuclear Radiation Detectors

Surface processing of CdTe crystals by an excimer laser and its application in fabricating nuclear radiation detectors

2004 ◽  
Vol 1 (4) ◽  
pp. 1071-1074 ◽  
Author(s):  
M. Niraula ◽  
Y. Agata ◽  
K. Yasuda ◽  
A. Nakamura ◽  
T. Aoki ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Radiation Detectors ◽  
Nuclear Radiation ◽  
Surface Processing ◽  
Nuclear Radiation Detectors
Sign in / Sign up

Export Citation Format

Share Document