Studies of electric, dielectric, and conduction mechanism by OLPT model of Li4P2O7

Ionics ◽  
2015 ◽  
Vol 21 (7) ◽  
pp. 1867-1879 ◽  
Author(s):  
A. Zaafouri ◽  
M. Megdiche ◽  
M. Gargouri
Keyword(s):  
Conduction Mechanism ◽  
Olpt Model

scholarly journals Study of charge transfer mechanism and dielectric relaxation of all-inorganic perovskite CsSnCl3

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21767-21780
Author(s):  
Mohamed Ben Bechir ◽  
Mohamed Houcine Dhaou
Keyword(s):  
Charge Transfer ◽  
Dielectric Relaxation ◽  
Monoclinic Phase ◽  
Conduction Mechanism ◽  
Small Polaron ◽  
Cubic Phase ◽  
Inorganic Perovskite ◽  
Charge Transfer Mechanism ◽  
Large Polaron ◽  
Olpt Model

The conduction mechanism in CsSnCl3 is interpreted through the following two approaches: the non-overlapping small polaron tunneling (NSPT) model (monoclinic phase) and the overlapping large polaron tunneling (OLPT) model (cubic phase).

Electrical properties and conduction mechanism study by OLPT model of NaZnPO4 compound

2018 ◽  
Vol 99 ◽  
pp. 52-60 ◽  
Author(s):  
N. Chakchouk ◽  
B. Louati ◽  
K. Guidara
Keyword(s):  
Electrical Properties ◽  
Conduction Mechanism ◽  
Mechanism Study ◽  
Olpt Model

AC conductivity and conduction mechanism study of rubidium gadolinium diphosphate compound

2018 ◽  
Vol 93 (5) ◽  
pp. 603-610 ◽  
Author(s):  
Samia Mathlouthi ◽  
Abderrazek Oueslati ◽  
Bassem Louati
Keyword(s):  
Ac Conductivity ◽  
Conduction Mechanism ◽  
Mechanism Study

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Study of conduction mechanism in p-Zn1-xSbxO/n-Si− (x = 0.00, 0.03, 0.05) hetero-junction devices

2021 ◽  
Vol 32 (18) ◽  
pp. 23232-23245
Author(s):  
Ishpal Rawal ◽  
Vipin Kumar ◽  
Vinod Kumar ◽  
Prikshit Gautam ◽  
Vijay Kumar Sharma
Keyword(s):  
Conduction Mechanism

Variable Temperature Measurement on Operating Pentacene-Based OTFT

2008 ◽  
Vol 1091 ◽  
Author(s):  
Hung-Keng Chen ◽  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
S.-L. Shy
Keyword(s):  
Conduction Mechanism ◽  
Variable Temperature ◽  
Electrical Measurement ◽  
Isokinetic Temperature ◽  
Trap States ◽  
Band Tail ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
Higher Temperature ◽  
Release Model

AbstractVariable temperature electrical measurement is well-established and used for determining the conduction mechanism in semiconductors. There is a Meyer¡VNeldel relationship between the activation energy and the prefactor with a Meyer¡VNeldel energy of 30.03 meV, which corresponds well with the isokinetic temperature of about 350 K. Therefore, the multiple trapping and release model is properly used to explain the thermally activated phenomenon. By the method, an exponential distribution of traps is assumed to be a better representation of trap states in band tail. Samples with higher temperature during measurement are observed to show better mobility, higher on-current and lower resistance, which agree well with the multiple trapping and release model proposed to explain the conduction mechanism in pentacene-based OTFTs.

scholarly journals Impact of polymer blending on Ionic Conduction Mechanism and Dielectric Properties of Sodium based PEO-PVdF Solid Polymer Electrolyte Systems

2021 ◽  
pp. 110096
Author(s):  
Yalla Mallaiah ◽  
Venkata Ramana Jeedi ◽  
R. Swarnalatha ◽  
A. Raju ◽  
S. Narender Reddy ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Polymer Electrolyte ◽  
Solid Polymer Electrolyte ◽  
Conduction Mechanism ◽  
Ionic Conduction ◽  
Solid Polymer ◽  
Polymer Blending

The optimal sintering atmosphere and defect structure of CuO-doped NKN-based ceramic with p/n-type conduction mechanism

2021 ◽  
Author(s):  
Zhenxing Wang ◽  
Yu Huan ◽  
Huizhong Wang ◽  
Yu Qiu ◽  
Yue Feng ◽  
...  
Keyword(s):  
Defect Structure ◽  
Conduction Mechanism ◽  
Sintering Atmosphere ◽  
Type Conduction
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