Capacitance-voltage characterization of pulsed plasma polymerized allylamine dielectrics for flexible polymeric field effect transistors

Journal of Electronic Materials ◽

10.1007/s11664-004-0128-4 ◽

2004 ◽

Vol 33 (10) ◽

pp. 1240-1247 ◽

Author(s):

Yifan Xu ◽

Paul R. Berger ◽

Jai Cho ◽

Richard B. Timmons

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Pulsed Plasma ◽

Capacitance Voltage

Download Full-text

Capacitance–Voltage Characterization of Tunnel Field Effect Transistors with a Si/SiGe Heterojunction

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.13138 ◽

2016 ◽

Vol 16 (10) ◽

pp. 10256-10259

Author(s):

Taehyung Park ◽

Jang Hyun Kim ◽

Hyun Woo Kim ◽

Euyhwan Park ◽

Junil Lee ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Capacitance Voltage

Download Full-text

Publisher’s Note: “High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors” [Rev. Sci. Instrum. 87, 044702 (2016)]

Review of Scientific Instruments ◽

10.1063/1.4950949 ◽

2016 ◽

Vol 87 (5) ◽

pp. 059902

Author(s):

G. Giusi ◽

O. Giordano ◽

G. Scandurra ◽

M. Rapisarda ◽

S. Calvi ◽

...

Keyword(s):

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

High Sensitivity ◽

Frequency Noise ◽

Sensitivity Measurement ◽

Capacitance Voltage ◽

Noise Characterization

Download Full-text

High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors

Review of Scientific Instruments ◽

10.1063/1.4945263 ◽

2016 ◽

Vol 87 (4) ◽

pp. 044702 ◽

Author(s):

G. Giusi ◽

O. Giordano ◽

G. Scandurra ◽

M. Rapisarda ◽

S. Calvi ◽

...

Keyword(s):

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

High Sensitivity ◽

Frequency Noise ◽

Sensitivity Measurement ◽

Capacitance Voltage ◽

Noise Characterization

Download Full-text

Electrical characterization of back-gated and top-gated germanium-core/silicon-shell nanowire field-effect transistors

2016 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2016.7578010 ◽

2016 ◽

Author(s):

Marolop Simanullang ◽

Gde B. M. Wisna ◽

Wei Cao ◽

Koichi Usami ◽

Kaustav Banerjee ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization

Download Full-text

Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108079 ◽

2021 ◽

pp. 108079

Author(s):

Dong-Hyeok Son ◽

Terirama Thingujam ◽

Quan Dai ◽

Jeong-Gil Kim ◽

Sorin Cristoloveanu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Fabrication And Characterization

Download Full-text

Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽

10.3390/en13010187 ◽

2020 ◽

Vol 13 (1) ◽

pp. 187 ◽

Author(s):

Kamil Bargieł ◽

Damian Bisewski ◽

Janusz Zarębski

Keyword(s):

Silicon Carbide ◽

Integrated Circuit ◽

Field Effect ◽

Field Effect Transistors ◽

Dynamic Properties ◽

Modified Model ◽

Spice Model ◽

Capacitance Voltage ◽

Effect Transistor ◽

Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

Download Full-text

Synthesis and Characterization of Diperfluorooctyl-Substituted Phenylene−Thiophene Oligomers as n-Type Semiconductors. Molecular Structure−Film Microstructure−Mobility Relationships, Organic Field-Effect Transistors, and Transistor Nonvolatile Memory Elements

Chemistry of Materials ◽

10.1021/cm0495008 ◽

2004 ◽

Vol 16 (23) ◽

pp. 4715-4727 ◽

Author(s):

Antonio Facchetti ◽

Joseph Letizia ◽

Myung-Han Yoon ◽

Melissa Mushrush ◽

Howard E. Katz ◽

...

Keyword(s):

Molecular Structure ◽

Nonvolatile Memory ◽

Field Effect ◽

Field Effect Transistors ◽

Synthesis And Characterization ◽

Organic Field Effect Transistors ◽

Film Microstructure

Download Full-text

Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

Download Full-text

Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances

Applied Physics Letters ◽

10.1063/1.3696045 ◽

2012 ◽

Vol 100 (12) ◽

pp. 123104 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization

Download Full-text

Modeling and characterization of photovoltaic and photoconductive effects in insulated-gate field effect transistors under optical excitation

Solid-State Electronics ◽

10.1016/j.sse.2021.108139 ◽

2021 ◽

pp. 108139

Author(s):

Han Bin Yoo ◽

Haesung Kim ◽

Ji Hee Ryu ◽

Jingyu Park ◽

Jong-Ho Bae ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Optical Excitation

Download Full-text