Capacitance–Voltage Characterization of Tunnel Field Effect Transistors with a Si/SiGe Heterojunction

2016 ◽  
Vol 16 (10) ◽  
pp. 10256-10259
Author(s):  
Taehyung Park ◽  
Jang Hyun Kim ◽  
Hyun Woo Kim ◽  
Euyhwan Park ◽  
Junil Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Capacitance Voltage

Fabrication and Characterization of GaN-based Nanostructure Field Effect Transistors

2021 ◽  
pp. 108079
Author(s):  
Dong-Hyeok Son ◽  
Terirama Thingujam ◽  
Quan Dai ◽  
Jeong-Gil Kim ◽  
Sorin Cristoloveanu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Fabrication And Characterization

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

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