Thermal Stability of Zone Melting p-Type (Bi, Sb)2Te3 Ingots and Comparison with the Corresponding Powder Metallurgy Samples

2018 ◽  
Vol 47 (7) ◽  
pp. 4038-4046 ◽  
Author(s):  
Chengpeng Jiang ◽  
Xi’an Fan ◽  
Jie Hu ◽  
Bo Feng ◽  
Qiusheng Xiang ◽  
...  
2018 ◽  
Vol 6 (3) ◽  
pp. 035907 ◽  
Author(s):  
Xiaoming Hu ◽  
Xi’ an Fan ◽  
Chengpeng Jiang ◽  
Zhao Pan ◽  
Bo Feng ◽  
...  

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Naiming Miao ◽  
Jinjin Jiang ◽  
Wangping Wu

Electroless nickel–phosphorus (Ni–P) films were produced on the surface of p-type monocrystalline silicon in the alkaline citrate solutions. The influences of bath chemistry and plating variables on the chemical composition, deposition rate, morphology, and thermal stability of electroless Ni–P films on silicon wafers were studied. The as-deposited Ni–P films were almost all medium- and high-P deposits. The concentrations of Ni2+ and citric ions influenced the deposition rate of the films but did not affect P content in the deposits. With increasing H2PO2− content, the P content and deposition rate were steadily increased. The pH and plating temperature had a significant effect on the chemical composition and the deposition rate of the films. The thermal stability of the medium-P film was better than that of the high-P deposit. At the same time, the proposed mechanism of Ni–P films on monocrystalline silicon substrates in the alkaline bath solution was discussed and addressed.


2015 ◽  
Vol 117 (2) ◽  
pp. 025703 ◽  
Author(s):  
Hailong Yu ◽  
Xufang Zhang ◽  
Huajun Shen ◽  
Yidan Tang ◽  
Yun Bai ◽  
...  

1990 ◽  
Vol 29 (7) ◽  
pp. 575-579 ◽  
Author(s):  
V. A. Bliznyuk ◽  
I. A. Kiyanskii ◽  
I. S. Dukhovnyi ◽  
V. P. Oleshko ◽  
G. V. Berdichevskii

2003 ◽  
Vol 433-436 ◽  
pp. 681-684 ◽  
Author(s):  
M.E. Samiji ◽  
A.M. Venter ◽  
A.W.R. Leitch

1999 ◽  
Vol 595 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
J. Jasinski ◽  
M. Zielinski ◽  
...  

AbstractWe have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.


RSC Advances ◽  
2019 ◽  
Vol 9 (37) ◽  
pp. 21451-21459
Author(s):  
František Zelenka ◽  
Pavel Brož ◽  
Jan Vřešťál ◽  
Jiří Buršík ◽  
Gerda Rogl ◽  
...  

Antimony vapour pressure is measured by Knudsen effusion mass spectrometry in order to assess the thermal stability of p-type DD0.7Fe3CoSb12 thermoelectrics.


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