Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

ABSTRACTThe electrical properties of Pd/Zn/Pd/Au based ohmic contacts to p-type In0 47Ga0 53As/ InP with an interposed superlattice of 50Å In047Gao 53As/ 50 Å InP have been investigated. In this study, several configurations of the Pd/Zn/Pd/Au metallization were fabricated with varying thicknesses of the Zn and interfacial Pd layers in the range 0 to 400 Å. The lowest values of specific contact resistance, ρc, were 1.2 x 10-5 Ω cm2 as-deposited and 7.5 x 106 Ω cm2 for samples annealed at 500 °C. In the as-deposited structures, ρc was reduced by an increase in thickness of both the Zn and Pd layers to 300 Å. For annealed samples, a critical thickness of the Zn ≥ 50 Å and Pd ≥ 100 Å layers was required in order to significantly reduce the magnitude of ρc. These results are consistent with a model of Pd/Zn contacts based on Zn doping of the interface. Studies of thermal stability of the contacts at 400 °C and 500 °C have shown that the Zn/Pd/Au and Pd/Zn/Pd/Au configurations were significanty lower in ρc at extended ageing times than the Pd/Au contacts.

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Improved light reflectance and thermal stability of Ag-based ohmic contacts on p-type GaN with La additive

Superlattices and Microstructures ◽

10.1016/j.spmi.2013.02.002 ◽

2013 ◽

Vol 57 ◽

pp. 51-57 ◽

Cited By ~ 4

Author(s):

I-Chen Chen ◽

Bo-Yuan Cheng ◽

Wen-Cheng Ke ◽

Cheng-Huang Kuo ◽

Li-Chuan Chang

Keyword(s):

Thermal Stability ◽

Ohmic Contacts ◽

Light Reflectance ◽

P Type ◽

Thermal Stability Of

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Electrical Characteristics and Thermal Stability of Platinum Silicide-to-Silicon Ohmic Contacts Metalized with Tungsten

Journal of The Electrochemical Society ◽

10.1149/1.2403360 ◽

1973 ◽

Vol 120 (12) ◽

pp. 1767 ◽

Cited By ~ 19

Author(s):

A. K. Sinha

Keyword(s):

Thermal Stability ◽

Ohmic Contacts ◽

Electrical Characteristics ◽

Platinum Silicide ◽

Thermal Stability Of

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Influences of Bath Chemistry and Plating Variables on Characteristics of Electroless Ni–P Films on Si Wafers from Alkaline Citrate Solutions

Journal of Nanomaterials ◽

10.1155/2018/1817542 ◽

2018 ◽

Vol 2018 ◽

pp. 1-11 ◽

Cited By ~ 1

Author(s):

Naiming Miao ◽

Jinjin Jiang ◽

Wangping Wu

Keyword(s):

Thermal Stability ◽

Chemical Composition ◽

Deposition Rate ◽

Electroless Nickel ◽

Monocrystalline Silicon ◽

P Content ◽

Almost All ◽

P Type ◽

Electroless Ni ◽

Thermal Stability Of

Electroless nickel–phosphorus (Ni–P) films were produced on the surface of p-type monocrystalline silicon in the alkaline citrate solutions. The influences of bath chemistry and plating variables on the chemical composition, deposition rate, morphology, and thermal stability of electroless Ni–P films on silicon wafers were studied. The as-deposited Ni–P films were almost all medium- and high-P deposits. The concentrations of Ni2+ and citric ions influenced the deposition rate of the films but did not affect P content in the deposits. With increasing H2PO2− content, the P content and deposition rate were steadily increased. The pH and plating temperature had a significant effect on the chemical composition and the deposition rate of the films. The thermal stability of the medium-P film was better than that of the high-P deposit. At the same time, the proposed mechanism of Ni–P films on monocrystalline silicon substrates in the alkaline bath solution was discussed and addressed.

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Thermal stability of low-resistance Au Ohmic contacts to GeTe

Thin Solid Films ◽

10.1016/j.tsf.2016.11.038 ◽

2017 ◽

Vol 621 ◽

pp. 145-150 ◽

Cited By ~ 4

Author(s):

Haila M. Aldosari ◽

Kayla A. Cooley ◽

Shih-Ying Yu ◽

Katherine C. Kragh-Buetow ◽

Suzanne E. Mohney

Keyword(s):

Thermal Stability ◽

Ohmic Contacts ◽

Low Resistance ◽

Thermal Stability Of

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Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN

MRS Proceedings ◽

10.1557/proc-337-421 ◽

1994 ◽

Vol 337 ◽

Author(s):

F. Ren ◽

C. R. Abernathy ◽

S. J. Pearton ◽

P. W. Wisk

Keyword(s):

Thermal Stability ◽

Doping Level ◽

Room Temperature ◽

Ohmic Contacts ◽

Contact Resistivity ◽

High Doping Level ◽

Transmission Line Method ◽

Different Temperatures ◽

Contact Resistivities ◽

Thermal Stability Of

ABSTRACTExtremely low contact resistance of non-alloyed Ti/Pt/Au metallization on n-type InN is demonstrated. The contacts were annealed at different temperatures up to 420 °C to investigate their thermal stability. A low contact resistivity of 1.8 x 10-7 ohm-cm2 was measured at room temperature using the transmission line method. This was due to the extremely high doping level (5 x 1020 cm-3) in the InN. After 300 °C annealing, the contact resistivity increased to 2.4 x 10-7 ohm-cm2- For 360 °C annealing, the contact morphology showed some degradation, but the contact resistivity was almost the same as at 300 °C. There was serious degradation of the contacts after 420 °C annealing. The morphology became very rough, and the contact and sheet resistances increased by factors of 3-5 times. This degradation is believed due to the decomposition of the InN film. The contact resistivities between n-type epitaxial GaAs and InN were also investigated, and showed values around 10-4 ohm-cm2.

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Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

MRS Proceedings ◽

10.1557/proc-403-669 ◽

1995 ◽

Vol 403 ◽

Author(s):

A. Piotrowska ◽

E. Kańifiska ◽

M. Guziewicz ◽

E. Mizera ◽

E. Dynowska ◽

...

Keyword(s):

Thermal Stability ◽

Ohmic Contact ◽

Ohmic Contacts ◽

Contact System ◽

Contact Reaction ◽

Annealing Behavior ◽

Thermally Activated ◽

Combined Use ◽

Semiconductor System ◽

Thermal Stability Of

AbstractAnnealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

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