Thermal Stability of Pd Schottky Contacts to p-Type 6H-SiC

2003 ◽  
Vol 433-436 ◽  
pp. 681-684 ◽  
Author(s):  
M.E. Samiji ◽  
A.M. Venter ◽  
A.W.R. Leitch
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Naiming Miao ◽  
Jinjin Jiang ◽  
Wangping Wu

Electroless nickel–phosphorus (Ni–P) films were produced on the surface of p-type monocrystalline silicon in the alkaline citrate solutions. The influences of bath chemistry and plating variables on the chemical composition, deposition rate, morphology, and thermal stability of electroless Ni–P films on silicon wafers were studied. The as-deposited Ni–P films were almost all medium- and high-P deposits. The concentrations of Ni2+ and citric ions influenced the deposition rate of the films but did not affect P content in the deposits. With increasing H2PO2− content, the P content and deposition rate were steadily increased. The pH and plating temperature had a significant effect on the chemical composition and the deposition rate of the films. The thermal stability of the medium-P film was better than that of the high-P deposit. At the same time, the proposed mechanism of Ni–P films on monocrystalline silicon substrates in the alkaline bath solution was discussed and addressed.


2015 ◽  
Vol 117 (2) ◽  
pp. 025703 ◽  
Author(s):  
Hailong Yu ◽  
Xufang Zhang ◽  
Huajun Shen ◽  
Yidan Tang ◽  
Yun Bai ◽  
...  

1999 ◽  
Vol 595 ◽  
Author(s):  
E. Kaminska ◽  
A. Piotrowska ◽  
A. Barcz ◽  
J. Jasinski ◽  
M. Zielinski ◽  
...  

AbstractWe have shown that Zr-based metallization can effectively remove hydrogen from the p-type GaN subsurface, which eventually leads to the formation of an ohmic contact. As the release of hydrogen starts at ∼900°C, the thermal stability of the contact system is of particular importance. The remarkable thermal behavior of the ZrN/ZrB2 metallization is associated to the microstructure of each individual Zr-based compound, as well as to the interfacial crystalline accommodation.


2003 ◽  
Vol 51 (3) ◽  
pp. 653-663 ◽  
Author(s):  
J.R Hayes ◽  
D-W Kim ◽  
H Meidia ◽  
S Mahajan

RSC Advances ◽  
2019 ◽  
Vol 9 (37) ◽  
pp. 21451-21459
Author(s):  
František Zelenka ◽  
Pavel Brož ◽  
Jan Vřešťál ◽  
Jiří Buršík ◽  
Gerda Rogl ◽  
...  

Antimony vapour pressure is measured by Knudsen effusion mass spectrometry in order to assess the thermal stability of p-type DD0.7Fe3CoSb12 thermoelectrics.


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