Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

1999 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
...  
Keyword(s):  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Density Plasma

scholarly journals Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

2010 ◽  
Vol 8 ◽  
pp. 012017 ◽  
Author(s):  
C Altamore ◽  
C Tringali ◽  
N Sparta' ◽  
S Di Marco ◽  
A Grasso ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Very High ◽  
Density Plasma

Characterization of the CH4/H2/Ar high density plasma etching process for ZnSe

2001 ◽  
Vol 30 (5) ◽  
pp. 538-542 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
J. E. Butler
Keyword(s):  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Density Plasma

scholarly journals Etch Processing of III-V Nitrides

1999 ◽  
Vol 4 (S1) ◽  
pp. 902-913 ◽  
Author(s):  
Charles R. Eddy
Keyword(s):  
Plasma Etching ◽  
Microwave Power ◽  
Ohmic Contacts ◽  
High Density ◽  
Etching Process ◽  
Ion Energy ◽  
Plasma Etching Process ◽  
Device Processing ◽  
The Impact ◽  
Density Plasma

As III-V nitride devices advance in technological importance, a fundamental understanding of device processing techniques becomes essential. Recent works have exposed various aspects of etch processes. The most recent advances and the greatest remaining challenges in the etching of GaN, AlN, and InN are reviewed. A more detailed presentation is given with respect to GaN high density plasma etching. In particular, the results of parametric and fundamental studies of GaN etching in a high density plasma are described. The effect of ion energy and mass on surface electronic properties is reported. Experimental results identify preferential sputtering as the leading cause of observed surface non-stoichiometry. This mechanism provides excellent surfaces for ohmic contacts to n-type GaN, but presents a major obstacle for Schottky contacts or ohmic contacts to p-type GaN. Chlorine-based discharges minimize this stoichiometry problem by improving the rate of gallium removal from the surface. In an effort to better understand the high density plasma etching process for GaN, in-situ mass spectrometry is employed to study the chlorine-based high density plasma etching process. Gallium chloride mass peaks were monitored in a highly surface sensitive geometry as a function of microwave power (ion flux), total pressure (neutral flux), and ion energy. Microwave power and pressure dependencies clearly demonstrate the importance of reactive ions in the etching of wide band gap materials. The ion energy dependence demonstrates the importance of adequate ion energy to promote a reasonable etch rate (≥100-150 eV). The benefits of ion-assisted chemical etching are diminished for ion energies in excess of 350 V, placing an upper limit to the useful ion energy range for etching GaN. The impact of these results on device processing will be discussed and future needs identified.

Etch Processing of III-V Nitrides

1998 ◽  
Vol 537 ◽  
Author(s):  
Charles R. Eddy
Keyword(s):  
Plasma Etching ◽  
Microwave Power ◽  
Ohmic Contacts ◽  
High Density ◽  
Etching Process ◽  
Ion Energy ◽  
Plasma Etching Process ◽  
Device Processing ◽  
The Impact ◽  
Density Plasma

AbstractAs III-V nitride devices advance in technological importance, a fundamental understanding of device processing techniques becomes essential. Recent works have exposed various aspects of etch processes. The most recent advances and the greatest remaining challenges in the etching of GaN, AIN, and InN are reviewed. A more detailed presentation is given with respect to GaN high density plasma etching. In particular, the results of parametric and fundamental studies of GaN etching in a high density plasma are described. The effect of ion energy and mass on surface electronic properties is reported. Experimental results identify preferential sputtering as the leading cause of observed surface non-stoichiometry. This mechanism provides excellent surfaces for ohmic contacts to n-type GaN, but presents a major obstacle for Schottky contacts or ohmic contacts to p-type GaN. Chlorine-based discharges minimize this stoichiometry problem by improving the rate of gallium removal from the surface. In an effort to better understand the high density plasma etching process for GaN, in-situ mass spectrometry is employed to study the chlorine-based high density plasma etching process. Gallium chloride mass peaks were monitored in a highly surface sensitive geometry as a function of microwave power (ion flux), total pressure (neutral flux), and ion energy. Microwave power and pressure dependencies clearly demonstrate the importance of reactive ions in the etching of wide band gap materials. The ion energy dependence demonstrates the importance of adequate ion energy to promote a reasonable etch rate (≥ 100-150 eV). The benefits of ion-assisted chemical etching are diminished for ion energies in excess of 350 V, placing an upper limit to the useful ion energy range for etching GaN. The impact of these results on device processing will be discussed and future needs identified.

Characterization of Plasma Etching Process Damage in HgCdTe

2013 ◽  
Vol 42 (11) ◽  
pp. 3006-3014 ◽  
Author(s):  
A. Gaucher ◽  
J. Baylet ◽  
J. Rothman ◽  
E. Martinez ◽  
C. Cardinaud
Keyword(s):  
Plasma Etching ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Process Damage

Characterization of the CH4/H2/Ar High Density Plasma Etch Process for HgCdTe

1996 ◽  
Vol 450 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
R. T. Holm ◽  
O. J. Glembocki ◽  
...  
Keyword(s):  
Surface Temperature ◽  
Plasma Etching ◽  
High Density ◽  
Scanning Electron Micrographs ◽  
Plasma Etch ◽  
Ion Energy ◽  
Residual Damage ◽  
Hall Effect Measurements ◽  
Density Plasma

ABSTRACTHigh density plasma etching of Hg1−xCdxTe in CH4/H2/Ar chemistry is examined using mass spectroscopy with careful surface temperature monitoring. The dominant etch products are monitored as a function of surface temperature (15–200°C), ion energy (20–200 eV), total pressure (0.5–5 mTorr), microwave power (200–400 W), and flow fraction of methane in the etch gas mixture (0–30%). In addition, observations are made regarding the regions of parameter space which are best suited to anisotropie, low damage etch processing. These observations are compared with previous results in the form of scanning electron micrographs of etched features for anisotropy evaluation and Hall effect measurements for residual damage. Insights to the overall etch mechanism are given.

Characterization of GaAs Surfaces Subjected to A Cl2/Ar High Density Plasma Etching Process

1996 ◽  
Vol 448 ◽  
Author(s):  
C.R. Eddy ◽  
O.J. Glembocki ◽  
V.A. Shamamian ◽  
D. Leonhardt ◽  
R.T. Holm ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Optical Measurement ◽  
Diffuse Reflectance Spectroscopy ◽  
Surface Damage ◽  
High Density ◽  
Ex Situ ◽  
Process Conditions ◽  
Spectroscopic Techniques ◽  
Density Plasma

AbstractHigh density plasma etching of III-V compound semiconductors is critically important to the development of advanced optoelectronic and high frequency devices. Unfortunately, the surface chemistry of these processes is not well understood. In an effort to monitor surface processes and their dependence on process conditions in a realistic etching environment, we have applied mass spectroscopic techniques for the study of GaAs etching in Cl2/Ar chemistry. Etch product chlorides were monitored, together with optical measurement of the surface temperature by diffuse reflectance spectroscopy, as pressure (neutral flux), microwave power (ion flux) and rf bias of the substrate (ion energy) were varied. Observations from the spectroscopic techniques were correlated with ex situ surface damage assessments of unpassivated surfaces by photoreflectance spectroscopy. As a result, insights are made into regions of process conditions that are well suited to anisotropic, low damage etching.

Development and characterization of a new plasma etching process for mask manufacturing

2001 ◽  
Author(s):  
Frank Erber ◽  
Guenther G. Ruhl ◽  
C. Ebi ◽  
Ralf Dietrich ◽  
Josef Mathuni ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etching Process ◽  
Plasma Etching Process

Fabrication of high-density Si and SixGe1−x nanowire arrays based on the single step plasma etching process

2013 ◽  
Vol 31 (4) ◽  
pp. 041806 ◽  
Author(s):  
Mickael Martin ◽  
Sebastien Avertin ◽  
Thierry Chevolleau ◽  
Florian Dhalluin ◽  
Maelig Ollivier ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Single Step ◽  
High Density ◽  
Nanowire Arrays ◽  
Etching Process ◽  
Plasma Etching Process

High-Density Groove Mastering Using an Electron Beam Recorder and Plasma Etching Process

2002 ◽  
Vol 41 (Part 1, No. 3B) ◽  
pp. 1698-1703 ◽  
Author(s):  
Masahiro Katsumura ◽  
Hiroshi Nishiwaki ◽  
Takanori Mitsuhata ◽  
Makoto Okano ◽  
Tetsuya Iida ◽  
...  
Keyword(s):  
Electron Beam ◽  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process
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