Influence of uniaxial mechanical stress on the high frequency performance of metal-oxide-semiconductor field effect transistors on (100) Si wafer

Applied Physics Letters ◽

10.1063/1.3428793 ◽

2010 ◽

Vol 96 (21) ◽

pp. 213515 ◽

Author(s):

Younggun Han ◽

Masaaki Koganemaru ◽

Toru Ikeda ◽

Noriyuki Miyazaki ◽

Woon Choi ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Frequency Performance ◽

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Selectively silicided vertical power double-diffused metal–oxide semiconductor field effect transistors for high-frequency power switching applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584170 ◽

1988 ◽

Vol 6 (6) ◽

pp. 1740 ◽

Author(s):

K. Shenai

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Frequency Power ◽

Power Switching ◽

Frequency Power

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Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc21 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC21 ◽

Author(s):

Yao-Tsung Huang ◽

San-Lein Wu ◽

Hau-Yu Lin ◽

Cheng-Wen Kuo ◽

Shoou-Jinn Chang ◽

...

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Active Length ◽

Trench Isolation

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High-frequency noise in nanoscale metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.2740345 ◽

2007 ◽

Vol 101 (12) ◽

pp. 124501 ◽

Author(s):

Reza Navid ◽

Christoph Jungemann ◽

Thomas H. Lee ◽

Robert W. Dutton

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

High Frequency Noise

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High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3093884 ◽

2009 ◽

Vol 105 (7) ◽

pp. 074505 ◽

Author(s):

B. Nae ◽

A. Lazaro ◽

B. Iniguez

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.3231924 ◽

2009 ◽

Vol 95 (12) ◽

pp. 123508 ◽

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Noise ◽

Frequency Channel

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Effect of guard-ring on the DC and high-frequency performance of deep-submicrometer metal oxide semiconductor field effect transistor

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.20757 ◽

2013 ◽

Vol 24 (2) ◽

pp. 259-267

Author(s):

Ling Sun ◽

Jianjun Gao ◽

Andreas Werthof

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Deep Submicrometer ◽

Effect Transistor ◽

High Frequency Performance

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Modeling of Degradation Effects on the High Frequency Noise of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.38 ◽

2005 ◽

Vol 44 (1A) ◽

pp. 38-43 ◽

Author(s):

Heng-Fa Teng ◽

S.-L. Jang ◽

M.-H. Juang

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

High Frequency Noise

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Self-Aligned, Extremely High Frequency III–V Metal-Oxide-Semiconductor Field-Effect Transistors on Rigid and Flexible Substrates

Nano Letters ◽

10.1021/nl301699k ◽

2012 ◽

Vol 12 (8) ◽

pp. 4140-4145 ◽

Author(s):

Chuan Wang ◽

Jun-Chau Chien ◽

Hui Fang ◽

Kuniharu Takei ◽

Junghyo Nah ◽

...

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Flexible Substrates ◽

Extremely High Frequency

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Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress

Applied Physics Letters ◽

10.1063/1.2245373 ◽

2006 ◽

Vol 89 (7) ◽

pp. 073509 ◽

Author(s):

Ji-Song Lim ◽

Xiaodong Yang ◽

Toshikazu Nishida ◽

Scott E. Thompson

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Deformation Potential ◽

Direct Tunneling Current ◽

Band Deformation

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High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.090111 ◽

2012 ◽

Vol 51 ◽

pp. 090111 ◽

Author(s):

Hiroshi Kawarada

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Current ◽

Diamond Surfaces ◽

High Frequency Operation

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