A novel approach towards molecular memory device in gate tunable structure of MoS2-graphene

Nano Research ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 177-184
Author(s):  
Rahul Tripathi ◽  
Abha Misra
2004 ◽  
Vol 830 ◽  
Author(s):  
Alokik Kanwal ◽  
Shashi Paul ◽  
Manish Chhowalla

ABSTRACTIn this paper, we describe an all organic molecular memory device that combines the advantages of molecular and organic electronics. We accomplish this by combining C60 molecules with poly(4-vinylphenol) (PVP) and co-dissolving them in iso-propanol. The current-voltage measurements show a large hysteresis in the blend devices, in contrast to pure PVP devices. The thin blend films have been thoroughly characterized using Raman spectroscopy, atomic force microscopy and scanning electron microscopy.


2009 ◽  
Vol 114 (1) ◽  
pp. 567-571 ◽  
Author(s):  
Biswanath Mukherjee ◽  
Moumita Mukherjee ◽  
Jae-eun Park ◽  
Seungmoon Pyo

2016 ◽  
Vol 120 (2) ◽  
pp. 025501
Author(s):  
Liming Jiang ◽  
Wanzhi Qiu ◽  
Feras Al-Dirini ◽  
Faruque M. Hossain ◽  
Robin Evans ◽  
...  

2008 ◽  
Vol 1096 ◽  
Author(s):  
Kabeer Jasuja ◽  
Vikas Berry

AbstractThis report presents the functioning of a molecular memory device with azo-group-functionalized molecular-junctions between metal nanoelectrodes. These junctions are fabricated by a novel electrostatic-assembly process to incorporate azo-group containing polyelectrolyte (AP) between oppositely charged gold nanoparticles (GNP), functioning as nanoelectrodes. The device exhibits a bistable electronic memory effect induced by charge-transfer between AP and GNP, which can be controlled by photo-excitation of the AP. The ON and OFF memory states were found to have a rectification in the range of ∼5000 – 10000. This study will open avenues for development of next-generation molecular systems and devices to produce novel optoelectronic properties.


RSC Advances ◽  
2015 ◽  
Vol 5 (67) ◽  
pp. 54667-54671 ◽  
Author(s):  
Hua Hao ◽  
XiaoHong Zheng ◽  
Ting Jia ◽  
Zhi Zeng

Based on charge-state transition, a molecular memory device utilising single-molecule magnets can work at room temperature.


2007 ◽  
Vol 91 (17) ◽  
pp. 173111 ◽  
Author(s):  
Zhong Chen ◽  
Bongmook Lee ◽  
Smita Sarkar ◽  
Srivardhan Gowda ◽  
Veena Misra

2019 ◽  
Vol 476 (24) ◽  
pp. 3705-3719 ◽  
Author(s):  
Avani Vyas ◽  
Umamaheswar Duvvuri ◽  
Kirill Kiselyov

Platinum-containing drugs such as cisplatin and carboplatin are routinely used for the treatment of many solid tumors including squamous cell carcinoma of the head and neck (SCCHN). However, SCCHN resistance to platinum compounds is well documented. The resistance to platinum has been linked to the activity of divalent transporter ATP7B, which pumps platinum from the cytoplasm into lysosomes, decreasing its concentration in the cytoplasm. Several cancer models show increased expression of ATP7B; however, the reason for such an increase is not known. Here we show a strong positive correlation between mRNA levels of TMEM16A and ATP7B in human SCCHN tumors. TMEM16A overexpression and depletion in SCCHN cell lines caused parallel changes in the ATP7B mRNA levels. The ATP7B increase in TMEM16A-overexpressing cells was reversed by suppression of NADPH oxidase 2 (NOX2), by the antioxidant N-Acetyl-Cysteine (NAC) and by copper chelation using cuprizone and bathocuproine sulphonate (BCS). Pretreatment with either chelator significantly increased cisplatin's sensitivity, particularly in the context of TMEM16A overexpression. We propose that increased oxidative stress in TMEM16A-overexpressing cells liberates the chelated copper in the cytoplasm, leading to the transcriptional activation of ATP7B expression. This, in turn, decreases the efficacy of platinum compounds by promoting their vesicular sequestration. We think that such a new explanation of the mechanism of SCCHN tumors’ platinum resistance identifies novel approach to treating these tumors.


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