High-Performance Molecular Memory Device Using Ag−TCNQ Crystals Grown by Solution Process

2009 ◽  
Vol 114 (1) ◽  
pp. 567-571 ◽  
Author(s):  
Biswanath Mukherjee ◽  
Moumita Mukherjee ◽  
Jae-eun Park ◽  
Seungmoon Pyo
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Memory Device ◽  
Molecular Memory

scholarly journals Self-Powered All-Inorganic Perovskite Photodetectors with Fast Response Speed

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ting Zhang ◽  
Shibin Li
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Response Speed ◽  
Fast Response ◽  
Single Step ◽  
Inorganic Perovskite ◽  
Perovskite Materials ◽  
Photoactive Materials ◽  
Self Powered ◽  
Solvent Processing

AbstractIn this manuscript, the inorganic perovskite CsPbI2Br and CsPbIBr2 are investigated as photoactive materials that offer higher stability than the organometal trihalide perovskite materials. The fabrication methods allow anti-solvent processing the CsPbIxBr3−x films, overcoming the poor film quality that always occur in a single-step solution process. The introduced diethyl ether in spin-coating process is demonstrated to be successful, and the effects of the anti-solvent on film quality are studied. The devices fabricated using the methods achieve high-performance, self-powered and the stabilized photodetectors show fast response speed. The results illustrate a great potential of all-inorganic CsPbIxBr3−x perovskites in visible photodetection and provide an effective way to achieve high performance devices with self-powered capability.

High-performance inverted planar perovskite solar cells without a hole transport layer via a solution process under ambient conditions

2015 ◽  
Vol 3 (38) ◽  
pp. 19294-19298 ◽  
Author(s):  
Xichang Bao ◽  
Qianqian Zhu ◽  
Meng Qiu ◽  
Ailing Yang ◽  
Yujin Wang ◽  
...  
Keyword(s):  
Relative Humidity ◽  
High Performance ◽  
Perovskite Solar Cells ◽  
Solution Process ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Ambient Conditions ◽  
High Quality ◽  
Ito Glass

High-quality CH3NH3PbI3 perovskite films were directly prepared on simple treated ITO glass in air under a relative humidity of lower than 30%.

High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers

2017 ◽  
Vol 5 (35) ◽  
pp. 9138-9145 ◽  
Author(s):  
Zhaobing Tang ◽  
Jie Lin ◽  
Lishuang Wang ◽  
Ying Lv ◽  
Yongsheng Hu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Solution Process ◽  
Solution Processed ◽  
Light Emitting

High performance top-emitting green quantum dot light-emitting diodes have been developed based on an all-solution process and with a bottom Al anode.

scholarly journals Process Design Kit and Design Automation for Flexible Hybrid Electronics

2019 ◽  
Vol 16 (3) ◽  
pp. 117-123
Author(s):  
Tsung-Ching Huang ◽  
Ting Lei ◽  
Leilai Shao ◽  
Sridhar Sivapurapu ◽  
Madhavan Swaminathan ◽  
...  
Keyword(s):  
Process Design ◽  
Design Automation ◽  
High Performance ◽  
Large Scale ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Oxide Semiconductor ◽  
Wearable Electronics ◽  
Wide Range

Abstract High-performance low-cost flexible hybrid electronics (FHE) are desirable for applications such as internet of things and wearable electronics. Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for high-performance FHE because of its high carrier mobility, superior mechanical flexibility, and material compatibility with low-cost printing and solution processes. Flexible sensors and peripheral CNT-TFT circuits, such as decoders, drivers, and sense amplifiers, can be printed and hybrid-integrated with thinned (<50 μm) silicon chips on soft, thin, and flexible substrates for a wide range of applications, from flexible displays to wearable medical devices. Here, we report (1) a process design kit (PDK) to enable FHE design automation for large-scale FHE circuits and (2) solution process-proven intellectual property blocks for TFT circuits design, including Pseudo-Complementary Metal-Oxide-Semiconductor (Pseudo-CMOS) flexible digital logic and analog amplifiers. The FHE-PDK is fully compatible with popular silicon design tools for design and simulation of hybrid-integrated flexible circuits.

High performance of multilevel-cell phase change memory device with good endurance reliability

2019 ◽  
Vol 34 (10) ◽  
pp. 105019
Author(s):  
Yuan-Guang Liu ◽  
Yi-Feng Chen ◽  
Dao-Lin Cai ◽  
Yao-Yao Lu ◽  
Lei Wu ◽  
...  
Keyword(s):  
Phase Change ◽  
High Performance ◽  
Phase Change Memory ◽  
Memory Device ◽  
Change Memory

High-performance solution-processable flexible and transparent conducting electrodes with embedded Cu mesh

2018 ◽  
Vol 6 (16) ◽  
pp. 4389-4395 ◽  
Author(s):  
Seolhee Han ◽  
Yoonjeong Chae ◽  
Ju Young Kim ◽  
Yejin Jo ◽  
Sang Seok Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Solution Process ◽  
Free Solution ◽  
Transparent Electrodes ◽  
Transparent Conducting ◽  
Solution Processable ◽  
Transparent Conducting Electrodes

Well-defined and highly conductive Cu mesh transparent electrodes are prepared by a vacuum-free solution process.

scholarly journals Adaptive control in roll-forward recovery for extreme scale multigrid

2018 ◽  
Vol 33 (5) ◽  
pp. 817-837
Author(s):  
Markus Huber ◽  
Ulrich Rüde ◽  
Barbara Wohlmuth
Keyword(s):  
Adaptive Control ◽  
High Performance ◽  
Solution Process ◽  
Iterative Solution ◽  
Weighted Sums ◽  
Error Estimator ◽  
Recovery Method ◽  
Online Recovery ◽  
Healthy Part ◽  
Extreme Scale

With the increasing number of compute components, failures in future exa-scale computer systems are expected to become more frequent. This motivates the study of novel resilience techniques. Here, we extend a recently proposed algorithm-based recovery method for multigrid iterations by introducing an adaptive control. After a fault, the healthy part of the system continues the iterative solution process, while the solution in the faulty domain is reconstructed by an asynchronous online recovery. The computations in both the faulty and the healthy subdomains must be coordinated in a sensitive way, in particular, both under- and over-solving must be avoided. Both of these waste computational resources and will therefore increase the overall time-to-solution. To control the local recovery and guarantee an optimal recoupling, we introduce a stopping criterion based on a mathematical error estimator. It involves hierarchically weighted sums of residuals within the context of uniformly refined meshes and is well-suited in the context of parallel high-performance computing. The recoupling process is steered by local contributions of the error estimator before the fault. Failure scenarios when solving up to 6.9 × 1011 unknowns on more than 245,766 parallel processes will be reported on a state-of-the-art peta-scale supercomputer demonstrating the robustness of the method.

scholarly journals Electrode buffer layers producing high performance nonvolatile organic write-once-read-many-times memory devices

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13171-13176 ◽  
Author(s):  
Zhiguo Kong ◽  
Dongxue Liu ◽  
Jinghan He ◽  
Xiuyan Wang
Keyword(s):  
Threshold Voltage ◽  
High Performance ◽  
Memory Device ◽  
Buffer Layers ◽  
Memory Devices

CuI and Bphen buffer layers result in decreased switch threshold voltage and an increased ON/OFF ratio of an organic WORM memory device.

scholarly journals Synthesis of Cu-Doped Mn3O4@Mn-Doped CuO Nanostructured Electrode Materials by a Solution Process for High-Performance Electrochemical Pseudocapacitors

ACS Omega ◽  
2020 ◽  
Vol 5 (35) ◽  
pp. 22356-22366
Author(s):  
Hasi Rani Barai ◽  
Nasrin Siraj Lopa ◽  
Faiz Ahmed ◽  
Nazmul Abedin Khan ◽  
Sajid Ali Ansari ◽  
...  
Keyword(s):  
High Performance ◽  
Electrode Materials ◽  
Solution Process ◽  
Nanostructured Electrode ◽  
Mn Doped

scholarly journals Organic Memory Devices Using C60 and Insulating Polymer

2004 ◽  
Vol 830 ◽  
Author(s):  
Alokik Kanwal ◽  
Shashi Paul ◽  
Manish Chhowalla
Keyword(s):  
Electron Microscopy ◽  
Memory Device ◽  
Molecular Memory ◽  
Blend Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Organic Memory Devices ◽  
Large Hysteresis ◽  
Current Voltage ◽  
Scanning Electron

ABSTRACTIn this paper, we describe an all organic molecular memory device that combines the advantages of molecular and organic electronics. We accomplish this by combining C60 molecules with poly(4-vinylphenol) (PVP) and co-dissolving them in iso-propanol. The current-voltage measurements show a large hysteresis in the blend devices, in contrast to pure PVP devices. The thin blend films have been thoroughly characterized using Raman spectroscopy, atomic force microscopy and scanning electron microscopy.

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