Promising high-thermal-conductivity substrate material for high-power electronic device: silicon nitride ceramics

Rare Metals ◽  
2020 ◽  
Vol 39 (5) ◽  
pp. 463-478 ◽  
Author(s):  
Feng Hu ◽  
Zhi-Peng Xie ◽  
Jian Zhang ◽  
Zun-Lan Hu ◽  
Di An
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
High Power ◽  
Electronic Device ◽  
Substrate Material ◽  
High Thermal Conductivity ◽  
Power Electronic ◽  
Nitride Ceramics

Fracture Resistance Behavior of High-Thermal-Conductivity Silicon Nitride Ceramics

2013 ◽  
Vol 11 (5) ◽  
pp. 872-882 ◽  
Author(s):  
You Zhou ◽  
Tatsuki Ohji ◽  
Hideki Hyuga ◽  
Yu-ichi Yoshizawa ◽  
Norimitsu Murayama ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Fracture Resistance ◽  
High Thermal Conductivity ◽  
Nitride Ceramics

The Effects of Material Properties on Heat Dissipation in High Power Electronics

1998 ◽  
Vol 120 (3) ◽  
pp. 280-289 ◽  
Author(s):  
T. J. Lu ◽  
A. G. Evans ◽  
J. W. Hutchinson
Keyword(s):  
Thermal Conductivity ◽  
Power Electronics ◽  
High Power ◽  
Heat Dissipation ◽  
Substrate Material ◽  
High Thermal Conductivity ◽  
Analytical Models ◽  
Wide Range ◽  
Power Densities

The role of the substrate in determining heat dissipation in high power electronics is calculated, subject to convective cooling in the small Biot number regime. Analytical models that exploit the large aspect ratio of the substrate to justify approximations are shown to predict the behavior with good accuracy over a wide range of configurations. The solutions distinguish heat spreading effects’ that enable high chip-level power densities from insulation effects that arise at large chip densities. In the former, the attributes of high thermal conductivity are apparent, especially when the substrate dimensions are optimized. Additional benefits that derive from a thin layer of a high thermal conductivity material (such as diamond) are demonstrated. In the insulating region, which arises at high overall power densities, the substrate thermal conductivity has essentially no effect on the heat dissipation. Similarly, for compact multichip module designs, with chips placed on both sides of the substrate, heat dissipation is insensitive to the choice of the substrate material, unless advanced cooling mechanisms are used to remove heat around the module perimeter.

Spark Plasma Sintered Silicon Nitride Ceramics with High Thermal Conductivity Using MgSiN2as Additives

2009 ◽  
Vol 92 (9) ◽  
pp. 2122-2124 ◽  
Author(s):  
Gui-hua Peng ◽  
Min Liang ◽  
Zhen-hua Liang ◽  
Qing-yu Li ◽  
Wen-lan Li ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Nitride ◽  
High Thermal Conductivity ◽  
Nitride Ceramics ◽  
Spark Plasma ◽  
Sintered Silicon
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