scholarly journals The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

2015 ◽  
Vol 5 (8) ◽  
pp. 993-1001 ◽  
Author(s):  
E. M. Mkawi ◽  
K. Ibrahim ◽  
M. K. M. Ali ◽  
M. A. Farrukh ◽  
A. S. Mohamed
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Dopant Concentration ◽  
Thin Film Solar Cells ◽  
Zno Thin Films ◽  
Electrodeposition Method ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Cu2znsns4 Thin Film

Influence of hydrogen plasma treatment on Al-doped ZnO thin films for amorphous silicon thin film solar cells

2011 ◽  
Vol 11 (1) ◽  
pp. S12-S16 ◽  
Author(s):  
Fang-Hsing Wang ◽  
Hung-Peng Chang ◽  
Chih-Chung Tseng ◽  
Chia-Cheng Huang ◽  
Han-Wen Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Plasma Treatment ◽  
Amorphous Silicon ◽  
Hydrogen Plasma ◽  
Thin Film Solar Cells ◽  
Zno Thin Films ◽  
Silicon Thin Film ◽  
Doped Zno

scholarly journals Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-nα-Si:H Thin Film Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Fang-Hsing Wang ◽  
Shang-Chao Hung ◽  
Cheng-Fu Yang ◽  
Yen-Hsien Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Thin Film Solar Cells ◽  
Transparent Electrodes ◽  
Hall Measurements ◽  
Deposition Power ◽  
Doped Zno ◽  
Minimum Resistance

1.5 wt% zinc fluoride (ZnF2) was mixed with zinc oxide powder to form the F-doped ZnO (FZO) composition. At first, the FZO thin films were deposited at room temperature and5×10-3Torr in pure Ar under different deposition power. Hall measurements of the as-deposited FZO thin films were investigated, and then the electrical properties were used to find the deposition power causing the FZO thin films with minimum resistance. The FZO thin films with minimum resistance were further treated by H2plasma and then found their variations in the electrical properties by Hall measurements. Hydrochloric (HCl) acid solutions with different concentrations (0.1%, 0.2%, and 0.5%) were used to etch the surfaces of the FZO thin films. Finally, the as-deposited, HCl-etched as-deposited, and HCl-etched H2-plasma-treated FZO thin films were used as transparent electrodes to fabricate the p-i-nα-Si:H thin film solar cells and their characteristics were compared in this study. We would show that using H2-plasma-treated and HCl-etched FZO thin films as transparent electrodes would improve the efficiency of the fabricated thin film solar cells.

Effect of Radio Frequency Power on the Properties of Al-Doped ZnO (AZO) Thin Films and Their Application to Cu2ZnSn(S,Se)4 Thin-Film Solar Cells

2018 ◽  
Vol 13 (11) ◽  
pp. 1689-1694 ◽  
Author(s):  
Jun Sung Jang ◽  
Jihun Kim ◽  
Mahesh P. Suryawanshi ◽  
Abhishek C. Lokhande ◽  
Hyeong Ho Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Radio Frequency ◽  
Radio Frequency Power ◽  
Thin Film Solar Cells ◽  
Doped Zno ◽  
Frequency Power

7.1% efficient co-electroplated Cu2ZnSnS4 thin film solar cells with sputtered CdS buffer layers

2016 ◽  
Vol 18 (2) ◽  
pp. 550-557 ◽  
Author(s):  
Jiahua Tao ◽  
Junfeng Liu ◽  
Leilei Chen ◽  
Huiyi Cao ◽  
Xiankuan Meng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Pure Phase ◽  
Fine Control ◽  
Cu2znsns4 Thin Film ◽  
Czts Thin Films

Cu2ZnSnS4 (CZTS) thin films with fine control over composition and pure phase were fabricated by sulfurization of co-electroplated Cu–Zn–Sn–S precursors.

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