Post-annealing effects on the physical and optical waveguiding properties of RF sputtered ZnO thin films

2015 ◽  
Vol 11 (5) ◽  
pp. 862-870 ◽  
Author(s):  
Faiza Meriche ◽  
Tahar Touam ◽  
Azeddine Chelouche ◽  
Mohamed Dehimi ◽  
Jeanne Solard ◽  
...  
2011 ◽  
Vol 58 (3) ◽  
pp. 515-519 ◽  
Author(s):  
Min Su Kim ◽  
Kwang Gug Yim ◽  
Min Young Cho ◽  
Jae-Young Leem ◽  
Dong-Yul Lee ◽  
...  

2019 ◽  
Vol 6 (7) ◽  
pp. 076434 ◽  
Author(s):  
Y Darma ◽  
E Nurfani ◽  
M A K Purbayanto ◽  
R Widita ◽  
A Rusydi ◽  
...  

2015 ◽  
Vol 117 (17) ◽  
pp. 17B901 ◽  
Author(s):  
Yu-Min Hu ◽  
Sih-Sian Li ◽  
Chein-Hsiun Kuang ◽  
Tai-Chun Han ◽  
Chin-Chung Yu

2011 ◽  
Vol 58 (5(1)) ◽  
pp. 1320-1323 ◽  
Author(s):  
Min Young Cho ◽  
Hyun Young Choi ◽  
Min Su Kim ◽  
Jae-Young Leem ◽  
Dong-Yul Lee ◽  
...  

2013 ◽  
Vol 734-737 ◽  
pp. 2492-2495
Author(s):  
Yong June Choi ◽  
Kyung Mun Kang ◽  
Hyung Ho Park

The post-annealing effects on the surface morphological changes of undoped and Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer deposition (ALD) were investigated. The as-grown films were deposited by ALD at growth temperature of 200°C and also, post-annealing of the samples was accomplished at 300°C for 1 h under nitrogen atmosphere. The X-ray diffraction of the films was monitored to study the crystallinity of the films according to post-anneal. The field emission-scanning electron microscopy and atomic force microscopy were conducted to observe the surface morphological changes and measure the root-mean-square roughness of the films in order to analysis the post-annealing effects on the surface roughness of the films.


Sign in / Sign up

Export Citation Format

Share Document