Brazing of porous copper foam/copper with amorphous Cu-9.7Sn-5.7Ni-7.0P (wt%) filler metal: interfacial microstructure and diffusion behavior

This research studies effects of the brazing time on interfacial microstructure of brazed joint between the porous copper foam (PCF) and Cu substrate using CuNiSnP amorphous filler metal. To examine the interfacial microstructure and its properties, an assessment of PCF/CuNiSnP/Cu brazed joints was conducted after electric furnace brazing under hydrogen (H2) atmosphere. The results showed that the interfacial microstructure was thick for short brazing time specimens and thin for prolonged brazing time specimens. The interfacial microstructures consisted of Cu-rich solid solution, (Cu, Ni)3P, and Cu3P as a eutectic structure discovered in the brazing region at different brazing times of 5, 10, and 20 min. Only the Cu-rich solid solution and (Cu, Ni)3P were found in the specimen with brazing time of 30 min. indicating that different brazing times affected interfacial microstructures and therefore reliability of the brazed joints.

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Interfacial microstructure and strength of brazed copper/porous copper foam towards the effect of porous copper foam pore density and brazing holding time

Materialwissenschaft und Werkstofftechnik ◽

10.1002/mawe.202000059 ◽

2021 ◽

Vol 52 (6) ◽

pp. 655-663

Author(s):

N.A. Mohd Zahri ◽

N.E. Sahira Shafee ◽

F. Yusof ◽

S. Nurmaya Musa ◽

N. Liana Sukiman ◽

...

Keyword(s):

Interfacial Microstructure ◽

Holding Time ◽

Pore Density ◽

Copper Foam ◽

Porous Copper

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Dissolution and Diffusion Behavior of Liquid Co2 into Water Under High Pressure Condition Using Direct Visualization Method for Ccs

SSRN Electronic Journal ◽

10.2139/ssrn.3365674 ◽

2019 ◽

Author(s):

Rintaro Fujikawa ◽

Xiao Ma ◽

Shuhei Fujimoto ◽

Akiko Kaneko ◽

Yutaka Abe

Keyword(s):

High Pressure ◽

Visualization Method ◽

Direct Visualization ◽

Pressure Condition ◽

Diffusion Behavior ◽

Liquid Co2 ◽

And Diffusion

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Sorption and diffusion behavior of actinium(iii) ions in contact with hydroxyapatite as a transporter of medical radionuclides

Russian Chemical Bulletin ◽

10.1007/s11172-020-3041-y ◽

2020 ◽

Vol 69 (12) ◽

pp. 2286-2293

Author(s):

A. V. Severin ◽

A. N. Vasiliev ◽

A. V. Gopin ◽

K. I. Enikeev

Keyword(s):

Diffusion Behavior ◽

And Diffusion ◽

Medical Radionuclides

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Nitrogen Implantation and Diffusion in Silicon

MRS Proceedings ◽

10.1557/proc-568-277 ◽

1999 ◽

Vol 568 ◽

Cited By ~ 3

Author(s):

Lahir Shaik Adam ◽

Mark E. Law ◽

Omer Dokumaci ◽

Yaser Haddara ◽

Cheruvu Murthy ◽

...

Keyword(s):

Silicon Oxide ◽

Gate Oxide ◽

Nitrogen Diffusion ◽

Nitrogen Implantation ◽

Oxide Interface ◽

Diffusion Behavior ◽

Czochralski Silicon ◽

Interface Modeling ◽

And Diffusion ◽

Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

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