Optimization of CNT and TFT Parameters for Maximum Transconductance and Safe Temperature Operation of Carbon Nanotube Thin-Film Transistors (CNT-TFTs) Employed in Flat Panel Displays

2020 ◽  
Author(s):  
R. Venkatesan ◽  
R. Joseph Daniel ◽  
P. Shanmugaraja
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Flat Panel Displays ◽  
Flat Panel

Low temperature (≦600°C) unhydrogenated in-situ doped polysilicon thin film transistors: Towards a technology for flat panel displays

1997 ◽  
Vol 296 (1-2) ◽  
pp. 133-136 ◽  
Author(s):  
L. Pichon ◽  
F. Raoult ◽  
K. Mourgues ◽  
K. Kis-Sion ◽  
T. Mohammed-Brahim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Flat Panel Displays ◽  
Flat Panel

Application of Self-Aligned Amorphous SI Thin-Film Transistors

1999 ◽  
Vol 557 ◽  
Author(s):  
J.P. Lu ◽  
P. Mei ◽  
C. Chua ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
New Technology ◽  
Channel Length ◽  
Shift Register ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Si ◽  
Si Thin Film ◽  
Dynamic Shift

AbstractWe have successfully used self-aligned Amorphous Si Thin-Film Transistors, fabricated by a laser doping/annealing process, to construct dynamic shift register circuits, which can be used as gate-line drivers or in other peripheral circuits for flat-panel displays and imagers. Taking advantage of easily scaling down the TFT channel length in a self-aligned process, much higher circuit speeds can be achieved compared to that of circuits using conventional TFTs. We have successfully demonstrated a four-phase dynamic shift register, operating at a clock speed higher that 250 kHz (1 μs for each clock phase) built on 3 μm channel length TFTs. This new technology opens up possibilities for integrating peripheral circuits in flat-panel displays and imagers based on a-Si TFTs.

Carbon Nanotube Thin Film Transistors for Flat Panel Display Application

2016 ◽  
Vol 374 (6) ◽  
Author(s):  
Xuelei Liang ◽  
Jiye Xia ◽  
Guodong Dong ◽  
Boyuan Tian ◽  
lianmao Peng
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Flat Panel Display ◽  
Flat Panel

High Performance Thin Film Transistors for Scanner Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Silicon Film

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.

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