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Lanthanum Doped Zirconium Oxide (LaZrO2) High-k Gate Dielectric FinFET SRAM Cell Optimization
Transactions on Electrical and Electronic Materials
◽
10.1007/s42341-021-00296-2
◽
2021
◽
Author(s):
Gurpurneet Kaur
◽
Sandeep Singh Gill
◽
Munish Rattan
Keyword(s):
Zirconium Oxide
◽
Gate Dielectric
◽
High K
◽
Sram Cell
◽
High K Gate Dielectric
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References
Study of 6T SRAM cell using High- K gate dielectric based junctionless silicon nanotube FET
Superlattices and Microstructures
◽
10.1016/j.spmi.2017.08.061
◽
2017
◽
Vol 112
◽
pp. 143-150
◽
Cited By ~ 9
Author(s):
Shubham Tayal
◽
Ashutosh Nandi
Keyword(s):
Gate Dielectric
◽
High K
◽
Sram Cell
◽
Silicon Nanotube
◽
High K Gate Dielectric
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The impact of high-k gate dielectric on Junctionless Vertical Double Gate MOSFET
International Journal of Computer Sciences and Engineering
◽
10.26438/ijcse/v6i6.14751478
◽
2018
◽
Vol 6
(6)
◽
pp. 1475-1478
Author(s):
Jagdeep Rahul
Keyword(s):
Gate Dielectric
◽
Double Gate
◽
High K
◽
Double Gate Mosfet
◽
The Impact
◽
High K Gate Dielectric
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Development of High-K Gate Dielectric Materials
Journal of Inorganic Materials
◽
10.3724/sp.j.1077.2008.00865
◽
2008
◽
Vol 23
(5)
◽
pp. 865-871
◽
Cited By ~ 2
Author(s):
De-Qi WU
Keyword(s):
Gate Dielectric
◽
Dielectric Materials
◽
High K
◽
High K Gate Dielectric
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Optimization of Device Dimensions of High-k Gate Dielectric Based DG-TFET for Improved Analog/RF Performance
Silicon
◽
10.1007/s12633-021-01127-y
◽
2021
◽
Author(s):
Shubham Tayal
◽
Goyal Vibhu
◽
Shweta Meena
◽
Ravi Gupta
Keyword(s):
Gate Dielectric
◽
High K
◽
Rf Performance
◽
High K Gate Dielectric
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Polarity dependent reliability of advanced MOSFET using MOCVD nitrided Hf-silicate high-k gate dielectric
IEEE International Integrated Reliability Workshop Final Report 2002 IRWS-02
◽
10.1109/irws.2002.1194241
◽
2003
◽
Cited By ~ 2
Author(s):
J. Zhang
◽
E. Zhao
◽
Q. Xiang
◽
J. Chan
◽
J. Jeon
◽
...
Keyword(s):
Gate Dielectric
◽
High K
◽
High K Gate Dielectric
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Experimental observations of the thermal stability of high-k gate dielectric materials on silicon
Journal of Non-Crystalline Solids
◽
10.1016/s0022-3093(02)00964-x
◽
2002
◽
Vol 303
(1)
◽
pp. 54-63
◽
Cited By ~ 54
Author(s):
P.S. Lysaght
◽
P.J. Chen
◽
R. Bergmann
◽
T. Messina
◽
R.W. Murto
◽
...
Keyword(s):
Thermal Stability
◽
Gate Dielectric
◽
Dielectric Materials
◽
High K
◽
Thermal Stability Of
◽
High K Gate Dielectric
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Impact of nitrogen concentration on the performance of LaAlO3(1−y/2)Ny films for high-k gate dielectric applications
Journal of Physics D Applied Physics
◽
10.1088/0022-3727/38/3/013
◽
2005
◽
Vol 38
(3)
◽
pp. 442-445
◽
Cited By ~ 6
Author(s):
G H Shi
◽
X B Lu
◽
X K Kong
◽
Z G Liu
Keyword(s):
Gate Dielectric
◽
Nitrogen Concentration
◽
High K
◽
High K Gate Dielectric
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Thermal stability and electrical properties of Zr silicate films for high-k gate-dielectric applications, as prepared by pulsed laser deposition
Applied Physics A
◽
10.1007/s00339-003-2187-4
◽
2005
◽
Vol 80
(2)
◽
pp. 321-324
◽
Cited By ~ 7
Author(s):
J. Zhu
◽
Z.G. Liu
◽
M. Zhu
◽
G.L. Yuan
◽
J.M. Liu
Keyword(s):
Thermal Stability
◽
Electrical Properties
◽
Pulsed Laser Deposition
◽
Gate Dielectric
◽
Pulsed Laser
◽
Laser Deposition
◽
High K
◽
High K Gate Dielectric
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High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure
Nanoscale Research Letters
◽
10.1186/1556-276x-7-431
◽
2012
◽
Vol 7
(1)
◽
pp. 431
◽
Cited By ~ 16
Author(s):
Szu-Hung Chen
◽
Wen-Shiang Liao
◽
Hsin-Chia Yang
◽
Shea-Jue Wang
◽
Yue-Gie Liaw
◽
...
Keyword(s):
High Performance
◽
Gate Dielectric
◽
High K
◽
High K Gate Dielectric
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High-K gate dielectric depletion-mode and enhancement-mode GaN MOS-HEMTs for improved OFF-state leakage and DIBL for power electronics and RF applications
2015 IEEE International Electron Devices Meeting (IEDM)
◽
10.1109/iedm.2015.7409710
◽
2015
◽
Cited By ~ 2
Author(s):
H. W. Then
◽
L. A. Chow
◽
S. Dasgupta
◽
S. Gardner
◽
M. Radosavljevic
◽
...
Keyword(s):
Power Electronics
◽
Gate Dielectric
◽
Enhancement Mode
◽
High K
◽
Rf Applications
◽
High K Gate Dielectric
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