A new attempt for the evaluation of the absorption constant of ozone in water

1982 ◽  
Vol 37 (1) ◽  
pp. 122-124 ◽  
Author(s):  
V. Caprio ◽  
A. Insola ◽  
P.G. Lignola ◽  
G. Volpicelli
Keyword(s):  
Absorption Constant

Intrinsic Optical Absorption in Germanium

1964 ◽  
Vol 19 (5) ◽  
pp. 548-552
Author(s):  
Günther Harbeke
Keyword(s):  
Optical Absorption ◽  
Low Temperatures ◽  
Energy Difference ◽  
Direct Absorption ◽  
Band Structure Calculations ◽  
Bulk Single Crystals ◽  
Transmission Measurements ◽  
Absorption Constant ◽  
Valence Bands ◽  
Structure Calculations

The absorption constant of germanium beyond the first direct absorption edge has been determined up to energies of 2.5 eV by transmission measurements on very thin samples prepared from bulk single crystals. The results are discussed in terms of recent band structure calculations and previous reflection measurements. At low temperatures the observed structure gives evidence for exciton formation connected with direct transitions at a saddle point in the energy difference between conduction and valence bands.

Transparency of band-gap-shifted InGaAsP/lnP quantum-well waveguides

1996 ◽  
Vol 74 (S1) ◽  
pp. 32-34 ◽  
Author(s):  
J. -J. He ◽  
Emil S. Koteles ◽  
M. Davis ◽  
P. J. Poole ◽  
M. Dion ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Quantum Well ◽  
Ion Implantation ◽  
Band Gap ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Pin Diode ◽  
Excess Loss ◽  
Absorption Constant

The properties of band-gap-shifted InGaAsP/InP quantum-well waveguides were investigated. A 90 nm blue-shift of the band gap was obtained by phosphorus ion implantation followed by rapid thermal annealing. It was shown that the absorption constant at the original band edge was reduced from 110 to only 4 cm−1. No waveguide excess loss was observed due to the QW-intermixing process. Good electrical properties of the pin diode were also maintained.

scholarly journals Determination of the absorption constant in the interband region by photocurrent measurements

2006 ◽  
Vol 83 (1) ◽  
pp. 115-119 ◽  
Author(s):  
R. Mosimann ◽  
D. Haertle ◽  
M. Jazbinsek ◽  
G. Montemezzani ◽  
P. Günter
Keyword(s):  
Absorption Constant ◽  
Interband Region

Optical Properties and Band Offset of PbTe/Pb1−xEuxTe Diluted Magnetic Semiconductor Multiquantum Wells Studied by Transmission and Photoconductivity Measurements

1992 ◽  
Vol 281 ◽  
Author(s):  
Shu Yuan ◽  
H. Krenn ◽  
G. Springholz ◽  
G. Bauer ◽  
M. Kriechbaum
Keyword(s):  
Frequency Dependence ◽  
Function Approximation ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Infrared Region ◽  
Band Offset ◽  
Interband Transitions ◽  
Mid Infrared ◽  
Absorption Constant ◽  
Diluted Magnetic

ABSTRACTFrom transmission experiments in the mid infrared region the optical interband transitions between electric subbands in the valence and conduction band of the PbTe wells embedded in Pb1−xEuxTe barriers (x = 2.6% to 3.0%) were determined and compared with calculations based on the envelope function approximation. The frequency dependence of the absorption constant α was calculated, taking the in-plane dispersion of the multiquantum well band structure into account. The frequency dependence of the refractive index n(ω) was derived from α(ω) using a Kramers-Kronig transformation and it exhibits several extrema which coincide with the onset of the various interband transitions. Experimentally the onset of these transitions was also observed in photoconductivity experiments. The changes in n(ω) are as large as 15 % and therefore important for the optical confinement in quantum well lasers grown with these materials.

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