UV absorption spectra of vibrationally excited O2 and its accumulation under KrF excimer laser irradiation in a low-temperature Ar crystal

1996 ◽  
Vol 256 (1-2) ◽  
pp. 126-132 ◽  
Author(s):  
Hideo Kajihara ◽  
Tomoyuki Okamura ◽  
Seiichiro Koda
Keyword(s):  
Low Temperature ◽  
Laser Irradiation ◽  
Absorption Spectra ◽  
Excimer Laser ◽  
Uv Absorption ◽  
Vibrationally Excited ◽  
Uv Absorption Spectra ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

scholarly journals Formation of Varistor Layer at the Surface of SrTiO3-Based Ceramics by KrF Excimer Laser Irradiation.

1999 ◽  
Vol 107 (1252) ◽  
pp. 1229-1231 ◽  
Author(s):  
Jong-Won YOON ◽  
Katsuki HIGAKI ◽  
Masaru MIYAYAMA ◽  
Tetsuichi KUDO
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

Improvement of resistance to corrosion of stainless steel 304 in acid solutions by simultaneous deposition with doping of Si using KrF excimer laser

1990 ◽  
Vol 5 (12) ◽  
pp. 2835-2840 ◽  
Author(s):  
Koji Sugioka ◽  
Hideo Tashiro ◽  
Koichi Toyoda ◽  
Hideyuki Murakami ◽  
Hiroshi Takai
Keyword(s):  
Stainless Steel ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Polarization Resistance ◽  
Cathodic Polarization ◽  
Acid Solutions ◽  
Stainless Steel 304 ◽  
Quantitative Verification ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

The chemical stability of the surface of stainless steel (SUS) 304 in acid immersion tests is greatly improved by the laser implant-deposition (LID) process, i.e., the simultaneous deposition and incorporation of silicon by KrF excimer laser irradiation. The etching depths of the treated samples in 1.32 N HCl solution are substantially zero at the laser irradiation conditions of more than 40 pulses and of more than 400 mJ/cm2 at the surface. By the quantitative verification of cathodic polarization in 1 N H2SO4, the highest polarization resistance is estimated to be 26.7 times that of the nontreated sample.

Improved Abruptness of Si/Sin Interface by ArF Excimer-Laser Pre-Annealing to Sin

1994 ◽  
Vol 345 ◽  
Author(s):  
Yasutaka Uchida ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Field Effect ◽  
Field Effect Mobility ◽  
Resolution Limit ◽  
Laser Recrystallization ◽  
Excimer Laser Irradiation ◽  
Arf Excimer Laser ◽  
Krf Excimer Laser ◽  
Film Annealing

AbstractXPS measurement showed that undesirable SiNH component was reduced drastically from the low-temperature deposited SiN surface by intense ArF excimer-laser irradiation. Although the improved layer was as thin as 15nm, it was very effective to stop diffusion of N atoms from the bottom SiN layer to the top Si layer during the excimer-laser recrystallization step. N-diffused Si layer at the Si/SiN interface was less than the XPS resolution limit for the pre-annealed SiN structure, but about 5nm thick. As a result, the field-effect mobility of the poly-Si/SiN TFT was increased drastically by laser-irradiation to SiN film. Annealing characteristics are also presented for the various SiN film thicknesses and for both the ArF and KrF excimer-laser lights.

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