The effect of silicon doping on the lattice parameter of gallium arsenide grown by liquid-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniques

1980 ◽  
Vol 50 (3) ◽  
pp. 648-653 ◽  
Author(s):  
P.F. Fewster ◽  
A.F.W. Willoughby
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Vapour Phase ◽  
Lattice Parameter ◽  
Silicon Doping ◽  
Vapour Phase Epitaxy

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

Dislocations Nucleating Growth in Liquid Phase Epitaxy of Gallium Arsenide

1993 ◽  
Vol 312 ◽  
Author(s):  
Werner Möhling ◽  
H. Weishart ◽  
E. Bauser
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Crystal Surface ◽  
Double Crystal ◽  
Growth Interface ◽  
Growth Step ◽  
Burgers Vector ◽  
X Ray ◽  
Back Reflection

AbstractDislocations in GaAs are analysed by X-ray topography in order to relate their nature to their efficiency in generating growth steps. The analysis is mainly based on comparing double crystal back reflection images of the defects to calculated misorientations of the crystal surface which are caused at the outcrop. All types of dislocations are equally effective provided their Burgers vector has a component normal to the growth interface. Concentric growth step patterns, which develop in varying numbers on different samples are not caused by substrate dislocations.

Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

2017 ◽  
Vol 51 (11) ◽  
pp. 1485-1489
Author(s):  
A. V. Murel ◽  
V. B. Shmagin ◽  
V. L. Krukov ◽  
S. S. Strelchenko ◽  
E. A. Surovegina ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Liquid Phase ◽  
High Resistance ◽  
Liquid Phase Epitaxy ◽  
Capacitance Spectroscopy
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