Vapor growth of InGaAs and InP on (100), (110), (111), (311) and (511) InP substrates

1982 ◽  
Vol 59 (3) ◽  
pp. 654-658 ◽  
Author(s):  
G.H. Olsen ◽  
T.J. Zamerowski ◽  
F.Z. Hawrylo
Keyword(s):  
Vapor Growth ◽  
Inp Substrates

Solution versus Vapor Growth of Dipolar Layers on Activated Oxide Substrates

Langmuir ◽  
2003 ◽  
Vol 19 (12) ◽  
pp. 4871-4875 ◽  
Author(s):  
F. Nüesch ◽  
M. Carrara ◽  
L. Zuppiroli
Keyword(s):  
Solution Versus ◽  
Vapor Growth ◽  
Oxide Substrates

The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B (n=1–5) InP substrates

2000 ◽  
Vol 218 (2-4) ◽  
pp. 203-208
Author(s):  
Zhongzhe Sun ◽  
Ju Wu ◽  
Yonghai Chen ◽  
Fengqi Liu ◽  
Ding Ding ◽  
...  
Keyword(s):  
Substrate Orientation ◽  
Inp Substrates

scholarly journals Vapor growth of doped mercuric iodide crystals by the Temperature Oscillation Method

1977 ◽  
Vol 42 ◽  
pp. 160-165 ◽  
Author(s):  
L. Van Den Berg ◽  
W.F. Schnepple ◽  
C. Ortale ◽  
M. Schieber
Keyword(s):  
Temperature Oscillation ◽  
Mercuric Iodide ◽  
Vapor Growth ◽  
Oscillation Method

Vapor Growth of AlP Single Crystals

1966 ◽  
Vol 113 (5) ◽  
pp. 467 ◽  
Author(s):  
F. J. Reid ◽  
S. E. Miller ◽  
H. L. Goering
Keyword(s):  
Single Crystals ◽  
Vapor Growth

scholarly journals Chemical Vapor Growth of Titanium Diboride Whisker

1975 ◽  
Vol 48 (11) ◽  
pp. 3156-3160 ◽  
Author(s):  
Seiji Motojima ◽  
Fumio Sugimori ◽  
Yasutaka Takahashi ◽  
Kohzo Sugiyama
Keyword(s):  
Titanium Diboride ◽  
Chemical Vapor ◽  
Vapor Growth

Nucleation and Heterointerface Structure of InAs Epilayers Grown on InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
K. S. Chandra Sekhar ◽  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Surface Morphology ◽  
Electronic Properties ◽  
Growth Temperature ◽  
High Speed ◽  
Interface Roughness ◽  
Structural Defects ◽  
Lower Growth ◽  
Substrate Interface ◽  
Film Substrate ◽  
Inp Substrates

ABSTRACTHeteroepitaxial growth of indium arsenide films on indium phosphide substrates is being actively pursued since the electronic properties of these films make them promising materials for optoelectronic and other high speed devices. The various structural aspects of the film that affect their electronic properties are structural defects like dislocations, film-substrate interface roughness and chemical inhomogeneities. In InAs films, electrons accumulate at the film-air interface, making surface morphology an important factor that decides the electronic properties. The InAs films used in this study were grown on InP substrates by metal organic vapor deposition, at different temperatures. A higher growth temperature not only resulted in poor surface morphology of the film, but also created a rough film-substrate interface. However, at all deposition temperatures, the film-substrate interfaces are sharp. At lower growth temperature, the interfaces were flat. Films grown at lower temperatures had good surface morphology and a flat and shaip heterointerface.

Quantum confined Stark effect in ZnCdSe/MgZnCdSe multiple quantum wells grown on InP substrates

1998 ◽  
Vol 184-185 ◽  
pp. 732-736 ◽  
Author(s):  
Takeshi Nagano ◽  
Ichirou Nomura ◽  
Masaru Haraguchi ◽  
Masayuki Arai ◽  
Hiroshi Hattori ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Inp Substrates
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