Routes to Diamond Heteroepiitaxy

1991 ◽  
Vol 250 ◽  
Author(s):  
Andrzej Badzian ◽  
Teresa Badzian

AbstractThis paper reviews the status of diamond heteroepitaxy approached by chemical vapor deposition and by physical methods. Reported are experiments with cubic boron nitride and nickel conducted with the help of microwave plasma chemical vapor deposition. X-ray diffraction data confirm diamond heteroepitaxy on the (111) faces of cubic boron nitride crystals. Heteroepitaxy on nickel was not demonstrated yet nevertheless suppression of graphite nucleation was achieved by formation of nickel hydride.

Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7167
Author(s):  
Kallol Chakrabarty ◽  
Paul A. Baker ◽  
Vineeth M. Vijayan ◽  
Shane A. Catledge

Boron nitride (BN) is primarily a synthetically produced advanced ceramic material. It is isoelectronic to carbon and, like carbon, can exist as several polymorphic modifications. Microwave plasma chemical vapor deposition (MPCVD) of metastable wurtzite boron nitride is reported for the first time and found to be facilitated by the application of direct current (DC) bias to the substrate. The applied negative DC bias was found to yield a higher content of sp3 bonded BN in both cubic and metastable wurtzite structural forms. This is confirmed by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). Nano-indentation measurements reveal an average coating hardness of 25 GPa with some measurements as high as 31 GPa, consistent with a substantial fraction of sp3 bonding mixed with the hexagonal sp2 bonded BN phase.


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