A novel method for the study of strain relaxation in lattice-mismatched heteroepitaxy: ultra-high vacuum scanning tunneling microscopy combined with in situ reflection high-energy electron diffraction

1995 ◽  
Vol 150 ◽  
pp. 1190-1195 ◽  
Author(s):  
N. Frank ◽  
G. Springholz ◽  
G. Bauer
Keyword(s):  
Strain Relaxation ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Novel Method ◽  
Mismatched Heteroepitaxy

Using a Moderate Vacuum, Hot/Cryo-Stage Equipped AFM for In-Situ Observation of α-Phase Growth In 60SN40PB Hypoeutectic Solder

1998 ◽  
Vol 4 (S2) ◽  
pp. 316-317
Author(s):  
D. N. Leonard ◽  
P.E. Russell
Keyword(s):  
Surface Science ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
In Situ Observation ◽  
Atmospheric Conditions ◽  
Tunneling Microscopy ◽  
Wide Range ◽  
Gas Environment

Atomic force microscopy (AFM) was introduced in 1984, and proved to be more versatile than scanning tunneling microscopy (STM) due to the AFM's capabilities to scan non-conductive samples under atmospheric conditions and achieve atomic resolution. Ultra high vacuum (UHV) AFM has been used in surface science applications when control of oxidation and corrosion of a sample's surface are required. Expensive equipment and time consuming sample exchanges are two drawbacks of the UHV AFM system that limit its use. Until recently, no hot/cryo-stage, moderate vacuum, controlled gas environment AFM was commonly available.We have demonstrated that phase transformations are easily observable in metal alloys and polymers with the use of a moderate vacuum AFM that has in-situ heating/cooling capabilities and quick (within minutes) sample exchange times. This talk will describe the results of experiments involving a wide range of samples designed to make use of the full capabilities of a hot/cryo-stage, controlled gas environment AFM.

Surface Reconstructions of Strained Epitaxial CoSi2/Si(100) Layers Studied by Scanning Tunneling Microscopy.

1991 ◽  
Vol 237 ◽  
Author(s):  
R. Stalder ◽  
C. Schwarz ◽  
H. Sirringhaus ◽  
H. VON Känel
Keyword(s):  
Electron Diffraction ◽  
Scanning Tunneling Microscopy ◽  
High Energy ◽  
Real Space ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Detailed Surface ◽  
Surface Reconstructions

ABSTRACTEpitaxial single-domain CoSi2(100) layers were grown on Si(100) by use of a template technique. In-situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED) were used for a detailed surface study. The (√2×√2)R45 reconstruction of the Co-rich “C-surface” and the (3√2×√2)R45 as well as a newly discovered (√2×√2)R45 of the Si-rich “S-surface” were resolved in real space and are discussed in detail. The transition from the C- to the S-surface above 500 °C is related to a (2×2) reconstruction.

IN SITU STM INVESTIGATION OF Ge NANOSTRUCTURES WITH AND WITHOUT Sb ON GRAPHITE

2006 ◽  
Vol 13 (02n03) ◽  
pp. 241-249
Author(s):  
SUNIL SINGH KUSHVAHA ◽  
ZHIJUN YAN ◽  
MAO-JIE XU ◽  
WENDE XIAO ◽  
XUE-SEN WANG
Keyword(s):  
Room Temperature ◽  
Pyrolytic Graphite ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Initial Stage ◽  
Defect Sites ◽  
Substrate Defects

Germanium was deposited onto highly oriented pyrolytic graphite (HOPG) with and without antimony in ultra-high vacuum. The surface morphology was analyzed using in situ scanning tunneling microscopy (STM) at room temperature (RT). The film grows exclusively in 3D island mode and was affected significantly by substrate defects. At initial stage, nucleation of cluster occurred at step edges and defect sites. Later, we found various types of Ge nanostructures on HOPG in different deposition conditions and stages, including cluster chains, cluster islands, nanowires, and double layer ramified islands at RT. Compact Ge islands were observed when depositing at a substrate temperature of 450 K or after an annealing at 600 K following RT deposition. In addition, the pre-deposited Sb on graphite enhances the sticking probability and suppresses the surface diffusion of Ge atoms, resulting in a significant increase in Ge cluster island density on HOPG terraces.

Surface Phases of Metals on Silicon as Material for Surface Engineering

2001 ◽  
Vol 697 ◽  
Author(s):  
Alexander A. Saranin ◽  
Sergey V. Rizhkov ◽  
Dmitriy A. Tsukanov ◽  
Victor G. Lifshits ◽  
Andrey V. Zotov ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Resistance ◽  
Surface Engineering ◽  
High Energy ◽  
Scanning Tunneling ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Surface Phases ◽  
Electrical Resistance Measurements

AbstractTo study structural and transport properties of the surface phases on silicon, a number of adsorbate/silicon systems on Si(100) and Si(111) surfaces has been investigated using scanning tunneling microscopy (STM), reflection-high-energy-electron diffraction (RHEED) and in-situ electrical resistance measurements. Results of investigations of formation and electrical properties of Si-Al, Si-Na, Si-Ag and Si-In surface structure are presented.

In-Situ Study of the Oxide Mediated Epitaxy of CoSi2 on Si

1999 ◽  
Vol 564 ◽  
Author(s):  
M. W. Kleinschmit ◽  
M. Yeadon ◽  
J. M. Gibson
Keyword(s):  
Silicon Surface ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
High Energy Electron ◽  
In Situ Study ◽  
Intermediate Phases ◽  
Transmission Electron ◽  
Combined Imaging

AbstractOxide Mediated Epitaxy (OME) shows promise as a method to form good quality, thin epitaxial CoSi2 films on most Si surfaces. We have performed an in-situ study of the OME of CoSi2, on the Si (001) surface. Our work was carried out with our specially modified ultra-high vacuum transmission electron microscope (UHV TEM) SHEBA (Surface High Energy Electron Beam Apparatus). With SHEBA we were able to monitor the diffraction pattern and therefore the phase formation throughout the anneal. Our results confirm the suppression of intermediate phases during CoSi2 formation in the OME process. We also see a difference in the as deposited Co film when the oxide coated silicon surface is used rather than a clean substrate. From combined imaging and diffraction studies we will shed some light on the mechanism behind the success of OME.

Sign in / Sign up

Export Citation Format

Share Document