Reflection high-energy electron diffraction/scanning tunneling microscopy study of InAs growth on the three low index orientations of GaAs: Two-dimensional versus three-dimensional growth and strain relaxation

1998 ◽  
Vol 16 (4) ◽  
pp. 2373 ◽  
Author(s):  
B. A. Joyce
Keyword(s):  
Strain Relaxation ◽  
Three Dimensional ◽  
Microscopy Study ◽  
High Energy ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Tunneling Microscopy ◽  
Dimensional Growth ◽  
Scanning Tunneling Microscopy Study

Two-Dimensional Assembly of Magnetic Binuclear Complexes: a Scanning Tunneling Microscopy Study

Langmuir ◽  
2009 ◽  
Vol 25 (23) ◽  
pp. 13606-13613 ◽  
Author(s):  
Florian Mögele ◽  
Donato Fantauzzi ◽  
Ulf Wiedwald ◽  
Paul Ziemann ◽  
Bernhard Rieger
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Binuclear Complexes ◽  
Two Dimensional ◽  
Tunneling Microscopy ◽  
Scanning Tunneling Microscopy Study

Self-Assembled InAs Islands on (AI,Ga)As, an In Situ Scanning Tunneling Microscopy Study

1999 ◽  
Vol 571 ◽  
Author(s):  
P. Ballet ◽  
J.B. Smathers ◽  
G.J. Salamo
Keyword(s):  
Scanning Tunneling Microscopy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Microscopy Study ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Self Organized ◽  
Scanning Tunneling Microscopy Study ◽  
Island Density

ABSTRACTWe report an in-situ molecular beam epitaxy – scanning tunneling microscopy study of three dimensional (3D) self organized InAs islands on (AI,Ga)As surfaces. The influence of the presence of Al atoms on the roughness of the starting surface and on the island density is shown by investigating several Al compositions. We emphasize the case of InAs/AlAs and point out the major differences between this system and the widely studied InAs/GaAs system.

Growth Process of Si and GaAs in the Heterostructure GaAs/Si/GaAs(100).

1991 ◽  
Vol 237 ◽  
Author(s):  
M. Lopez ◽  
Y. Takano ◽  
K. Pak ◽  
H. Yonezu
Keyword(s):  
Growth Process ◽  
Three Dimensional ◽  
High Energy ◽  
Two Dimensional ◽  
Spot Intensity ◽  
Interlayer Thickness ◽  
High Energy Electron ◽  
Initial Stage ◽  
Dimensional Growth ◽  
Si Films

ABSTRACTThe growth mode of Si on GaAs(100) substrates and that of GaAs on very thin (1/4 ∼ 3 ML) Si films grown pseudomorphically on GaAs was investigated by observing the behavior of the reflection-high energy electron diffraction (RHEED) specular spot intensity. From the presence of RHEED oscillations during the initial stage of the growth of Si on GaAs we infer a two-dimensional growth with nucleation on the terraces up to a thickness of 3 ML. During the posterior growth of GaAs on the pseudomorphic Si films, a tendency towards three dimensional growth was observed. This tendency increased with the Si interlayer thickness. The causes of the formation of these islands are discussed.

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