Protein-protein interaction of solubilized sarcoplasmic reticulum calcium pump ATPase during ATP hydrolysis analyzed by low-angle laser light scattering photometry

1989 ◽  
Vol 21 ◽  
pp. S29
Author(s):  
Y KIJIMA
Keyword(s):  
Light Scattering ◽  
Sarcoplasmic Reticulum ◽  
Protein Interaction ◽  
Atp Hydrolysis ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Calcium Pump ◽  
Protein Protein Interaction ◽  
Sarcoplasmic Reticulum Calcium

Invariance of Stoichiometry of the Sarcoplasmic Reticulum Calcium Pump at Physiological Calcium Concentrations – a Reevaluation

1985 ◽  
Vol 40 (7-8) ◽  
pp. 571-575 ◽  
Author(s):  
Wilhelm Hasselbach ◽  
Andrea Migala
Keyword(s):  
Sarcoplasmic Reticulum ◽  
Calcium Level ◽  
Calcium Concentration ◽  
Calcium Uptake ◽  
Atp Hydrolysis ◽  
Calcium Pump ◽  
Oxalate Precipitation ◽  
Sarcoplasmic Reticulum Calcium ◽  
Internal Calcium ◽  
External Calcium

Abstract The decline of the transport ratio of the sarcoplasmic calcium pump observed in a recent study (A. results from the retardation of calcium oxalate precipitation at low calcium/protein ratios. The prevailing high internal calcium level supports a rapid calcium backflux and a compensatory ATP hydrolysis during net calcium uptake which reduces the transport ratio. Yet, the determined calcium back­ flux does not fully account for the decline of the transport ratio. A supposed modulation of the stoichiometry of the pump by external calcium (0.1 μм) is at variance with results of previous studies showing a constant transport ratio of two in the same calcium concentration range.

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Laser Light ◽  
Growth Period ◽  
Laser Light Scattering ◽  
Heterojunction Bipolar Transistor ◽  
Dual Wavelength ◽  
Multi Quantum Well ◽  
Refractive Index Data

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

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