Frequency spectra of erythrocyte membrane flickering measured by laser light scattering

Author(s):  
A. M. Bek ◽  
Vadim L. Kononenko
1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.


2001 ◽  
Vol 101 (3) ◽  
pp. 109-118 ◽  
Author(s):  
Ichiro Kajiwara ◽  
Hisao Ogawa ◽  
Hirofumi Soejima ◽  
Keiji Takazoe ◽  
Shinzo Miyamoto ◽  
...  

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