Low temperature electron trapping lifetimes and extrinsic photoconductivity in n-type silicon doped with shallow impurities

1961 ◽  
Vol 22 ◽  
pp. 269-284 ◽  
Author(s):  
R.S. Levttt ◽  
A. Honig
1992 ◽  
Vol 72 (7) ◽  
pp. 2673-2679 ◽  
Author(s):  
P. Nubile ◽  
J. C. Bourgoin ◽  
D. Stievenard ◽  
D. Deresmes ◽  
G. Strobl

1995 ◽  
Vol 16 (7) ◽  
pp. 336-338 ◽  
Author(s):  
G. Meneghesso ◽  
E. De Bortoli ◽  
A. Paccagnella ◽  
E. Zanoni ◽  
C. Canali

2014 ◽  
Vol 59 (3) ◽  
pp. 209-214
Author(s):  
N.D. Curmei ◽  
◽  
G.V. Klishevich ◽  
V.I. Melnyk ◽  
◽  
...  

1977 ◽  
Vol 48 (8) ◽  
pp. 3621-3622 ◽  
Author(s):  
B. R. Nag ◽  
G. M. Dutta

2000 ◽  
Vol 338-342 ◽  
pp. 1619-1619
Author(s):  
L.S. Tan ◽  
A. Raman ◽  
K.M. Ng ◽  
S.J. Chua ◽  
A.T.S. Wee ◽  
...  

“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317


Author(s):  
A. Spindel ◽  
R. P. Reed ◽  
M. Tupper ◽  
J. Darr ◽  
D. Pollock

1985 ◽  
Vol 55 (11) ◽  
pp. 1188-1191 ◽  
Author(s):  
J. Mahy ◽  
J. Van Landuyt ◽  
S. Amelinckx ◽  
Y. Uchida ◽  
K. D. Bronsema ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document