Formation of TaS2 polytypes and hydrogen impurity

1986 ◽  
Vol 21 (12) ◽  
pp. 1405-1410 ◽  
Author(s):  
K. Hayashi ◽  
A. Kawamura
Keyword(s):  
Hydrogen Impurity

Hydrogen impurity in SrTiO3: structure, electronic properties and migration

2007 ◽  
Vol 75 (3) ◽  
pp. 374-378 ◽  
Author(s):  
Luis Villamagua ◽  
Rafael Barreto ◽  
Luis Miguel Prócel ◽  
Arvids Stashans
Keyword(s):  
Electronic Properties ◽  
Hydrogen Impurity ◽  
And Migration

First-Principles Study of Hydrogen Impurity in HgO

2005 ◽  
Vol 47 (92) ◽  
pp. 304 ◽  
Author(s):  
Choi M. ◽  
Nahm H. H. ◽  
Park C. H.
Keyword(s):  
First Principles ◽  
Hydrogen Impurity ◽  
First Principles Study

Spin polarized hartree-fock calculations for small Li and Be clusters with and without a hydrogen impurity

1983 ◽  
Vol 15 (1-4) ◽  
pp. 537-537
Author(s):  
A. Hintermann ◽  
A. M. Stoneham ◽  
A. H. Harker
Keyword(s):  
Hydrogen Impurity ◽  
Hartree Fock ◽  
Spin Polarized

Hydrogen in Compound Semiconductors

1992 ◽  
Vol 262 ◽  
Author(s):  
N. M. Johnson
Keyword(s):  
Deep Level ◽  
Thermal Dissociation ◽  
Experimental Studies ◽  
Compound Semiconductors ◽  
Hydrogen Impurity ◽  
Charged Species ◽  
Hydrogen Migration ◽  
Dissociation Energies ◽  
Layer Technique ◽  
Formation Of Complexes

ABSTRACTPhenomena associated with hydrogen in compound semiconductors include the formation of complexes with both dopant impurities and deep-level defects, the generation of hydrogen-related deep-level defects, and the migration of isolated hydrogen as a charged species. In addition to reviewing these phenomena, this paper describes the depletion-layer technique for determining thermal dissociation energies of hydrogen-impurity complexes and presents an updated tabulation of the parameters that have thus far been obtained from experimental studies to quantitatively describe hydrogen-dopant complexes and hydrogen migration in GaAs.

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