Hydrogen impurity in SrTiO3: structure, electronic properties and migration

We investigate the structural and electronic properties of SnX and SnX2 (X = S, Se) monolayers and further explore the separation and migration of photo-generated electrons/holes and redox capabilities.

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Electronic properties of multiple Si δ-doped GaAs layers grown by molecular beam epitaxy and migration-enhanced epitaxy

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90714-8 ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 700-702

Author(s):

S.M. Shibili ◽

A.B. Henriques ◽

C.A.C. Mendonça ◽

E.C.F. da Silva ◽

E.A. Meneses ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Electronic Properties ◽

Molecular Beam ◽

Migration Enhanced Epitaxy ◽

And Migration

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Demonstration of Retinal Glycogen with Silver Methenamine

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100066875 ◽

1971 ◽

Vol 29 ◽

pp. 564-565

Author(s):

A. W. Sedar ◽

G. H. Bresnick

Keyword(s):

Lactic Acid ◽

Chromic Acid ◽

Periodic Acid ◽

Müller Cell ◽

External Limiting Membrane ◽

Electron Microscope Level ◽

Reactive Process ◽

Inner Limiting Membrane ◽

Muller Cell ◽

And Migration

After experimetnal damage to the retina with a variety of procedures Müller cell hypertrophy and migration occurs. According to Kuwabara and others the reactive process in these injuries is evidenced by a marked increase in amount of glycogen in the Müller cells. These cells were considered originally supporting elements with fiber processes extending throughout the retina from inner limiting membrane to external limiting membrane, but are known now to have high lactic acid dehydrogenase activity and the ability to synthesize glycogen. Since the periodic acid-chromic acid-silver methenamine technique was shown to demonstrate glycogen at the electron microscope level, it was selected to react with glycogen in the fine processes of the Müller cell that ramify among the neural elements in various layers of the retina and demarcate these cells cytologically. The Rhesus monkey was chosen as an example of a well vascularized retina and the rabbit as an example of a avascular retina to explore the possibilities of the technique.

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Structure and migration of planar defects in crystals observed in atomic scale

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100108568 ◽

1978 ◽

Vol 36 (1) ◽

pp. 284-285 ◽

Cited By ~ 1

Author(s):

H. Hashimoto ◽

Y. Sugimoto ◽

Y. Takai ◽

H. Endoh

Keyword(s):

Electron Microscope ◽

Rotation Angle ◽

Crystal Surface ◽

Electron Gun ◽

Atomic Scale ◽

Present Observation ◽

Twist Boundary ◽

Optical Magnification ◽

Zinc Crystal ◽

And Migration

As was demonstrated by the present authors that atomic structure of simple crystal can be photographed by the conventional 100 kV electron microscope adjusted at “aberration free focus (AFF)” condition. In order to operate the microscope at AFF condition effectively, highly stabilized electron beams with small energy spread and small beam divergence are necessary. In the present observation, a 120 kV electron microscope with LaB6 electron gun was used. The most of the images were taken with the direct electron optical magnification of 1.3 million times and then magnified photographically.1. Twist boundary of ZnSFig. 1 is the image of wurtzite single crystal with twist boundary grown on the surface of zinc crystal by the reaction of sulphur vapour of 1540 Torr at 500°C. Crystal surface is parallel to (00.1) plane and electron beam is incident along the axis normal to the crystal surface. In the twist boundary there is a dislocation net work between two perfect crystals with a certain rotation angle.

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Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176149 ◽

1990 ◽

Vol 48 (4) ◽

pp. 602-603

Author(s):

J.M. Bonar ◽

R. Hull ◽

R. Malik ◽

R. Ryan ◽

J.F. Walker

Keyword(s):

Band Gap ◽

Electronic Properties ◽

Gaas Substrate ◽

Critical Thickness ◽

Lattice Mismatch ◽

Band Offset ◽

Misfit Dislocations ◽

Gaas Substrates ◽

Gaas Structure ◽

Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

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