The use of current gain as an indicator for the formation of hot spots due to current crowding in power transistors

Microelectronics Reliability ◽

10.1016/0026-2714(73)90609-4 ◽

1973 ◽

Vol 12 (1) ◽

pp. 17

Keyword(s):

Hot Spots ◽

Current Gain ◽

Current Crowding ◽

Power Transistors

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The Use of Current Gain as an Indicator for the Formation of Hot Spots Due to Current Crowding in Power Transistors

10.1109/irps.1972.362522 ◽

1972 ◽

Author(s):

Frank F. Oettinger ◽

Sherwin Rubin

Keyword(s):

Hot Spots ◽

Current Gain ◽

Current Crowding ◽

Power Transistors

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Simple method for increasing current gain and voltage ratings of power transistors

Electronics Letters ◽

10.1049/el:19870844 ◽

1987 ◽

Vol 23 (23) ◽

pp. 1213

Author(s):

A. Silard ◽

F. Floru ◽

C. Stefan ◽

G. Nani

Keyword(s):

Current Gain ◽

Simple Method ◽

Power Transistors

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Factors limiting current gain in power transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1977.18989 ◽

1977 ◽

Vol 24 (10) ◽

pp. 1255-1259 ◽

Author(s):

E.J. McGrath ◽

D.H. Navon

Keyword(s):

Limiting Current ◽

Current Gain ◽

Power Transistors

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Secondary breakdown and hot spots in power transistors

Proceedings of the IEEE ◽

10.1109/proc.1963.1964 ◽

1963 ◽

Vol 51 (3) ◽

pp. 513-513 ◽

Author(s):

R. Scarlett ◽

W. Shockley

Keyword(s):

Hot Spots ◽

Power Transistors

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Modeling of non-uniform heat dissipation and prediction of hot spots in power transistors

International Journal of Heat and Mass Transfer ◽

10.1016/s0017-9310(97)00299-8 ◽

1998 ◽

Vol 41 (15) ◽

pp. 2399-2407 ◽

Author(s):

L. Zhu ◽

K. Vafai ◽

L. Xu

Keyword(s):

Hot Spots ◽

Heat Dissipation ◽

Power Transistors ◽

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High Current Gain Silicon Carbide Bipolar Power Transistors

2006 IEEE International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/ispsd.2006.1666091 ◽

2006 ◽

Author(s):

M. Domeij ◽

Hyung-Seok Lee ◽

C.-M. Zetterling ◽

M. Ostling ◽

A. Schoner

Keyword(s):

Silicon Carbide ◽

Current Gain ◽

High Current ◽

Power Transistors

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Influence of the minority carrier extracted by the base electrode on current gain of bipolar power transistors

Solid-State Electronics ◽

10.1016/j.sse.2006.02.013 ◽

2006 ◽

Vol 50 (3) ◽

pp. 480-488

Author(s):

Bo Zhang ◽

Wanjun Chen ◽

Kun Yi ◽

Zhaoji Li

Keyword(s):

Minority Carrier ◽

Current Gain ◽

Power Transistors ◽

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Improvements in current gain and breakdown characteristics of silicon planar power transistors

Proceedings of the Indian Division of the Institution of Electronic and Radio Engineers ◽

10.1049/pidiere.1968.0008 ◽

1968 ◽

Vol 6 (3) ◽

pp. 93-98

Author(s):

K.S. Balain ◽

K.L. Jasuja ◽

S.S. Shekhawat ◽

S.K. Bhatnagar

Keyword(s):

Current Gain ◽

Power Transistors

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The effects of emitter impurity concentration on the high-current gain of silicon npn power transistors

Microelectronics Reliability ◽

10.1016/0026-2714(77)90567-4 ◽

1977 ◽

Vol 16 (6) ◽

pp. 655

Keyword(s):

Impurity Concentration ◽

Current Gain ◽

High Current ◽

Power Transistors

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The effects of emitter impurity concentration on the high-current gain of silicon NPN power transistors

10.1109/iedm.1976.189009 ◽

1976 ◽

Author(s):

R.U. Martinelli ◽

E. Jetter

Keyword(s):

Impurity Concentration ◽

Current Gain ◽

High Current ◽

Power Transistors

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