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The Use of Current Gain as an Indicator for the Formation of Hot Spots Due to Current Crowding in Power Transistors
Mapping Intimacies
◽
10.1109/irps.1972.362522
◽
1972
◽
Cited By ~ 2
Author(s):
Frank F. Oettinger
◽
Sherwin Rubin
Keyword(s):
Hot Spots
◽
Current Gain
◽
Current Crowding
◽
Power Transistors
Download Full-text
Related Documents
Cited By
References
The use of current gain as an indicator for the formation of hot spots due to current crowding in power transistors
Microelectronics Reliability
◽
10.1016/0026-2714(73)90609-4
◽
1973
◽
Vol 12
(1)
◽
pp. 17
Keyword(s):
Hot Spots
◽
Current Gain
◽
Current Crowding
◽
Power Transistors
Download Full-text
Simple method for increasing current gain and voltage ratings of power transistors
Electronics Letters
◽
10.1049/el:19870844
◽
1987
◽
Vol 23
(23)
◽
pp. 1213
Author(s):
A. Silard
◽
F. Floru
◽
C. Stefan
◽
G. Nani
Keyword(s):
Current Gain
◽
Simple Method
◽
Power Transistors
Download Full-text
Factors limiting current gain in power transistors
IEEE Transactions on Electron Devices
◽
10.1109/t-ed.1977.18989
◽
1977
◽
Vol 24
(10)
◽
pp. 1255-1259
◽
Cited By ~ 15
Author(s):
E.J. McGrath
◽
D.H. Navon
Keyword(s):
Limiting Current
◽
Current Gain
◽
Power Transistors
Download Full-text
Secondary breakdown and hot spots in power transistors
Proceedings of the IEEE
◽
10.1109/proc.1963.1964
◽
1963
◽
Vol 51
(3)
◽
pp. 513-513
◽
Cited By ~ 30
Author(s):
R. Scarlett
◽
W. Shockley
Keyword(s):
Hot Spots
◽
Power Transistors
Download Full-text
Modeling of non-uniform heat dissipation and prediction of hot spots in power transistors
International Journal of Heat and Mass Transfer
◽
10.1016/s0017-9310(97)00299-8
◽
1998
◽
Vol 41
(15)
◽
pp. 2399-2407
◽
Cited By ~ 8
Author(s):
L. Zhu
◽
K. Vafai
◽
L. Xu
Keyword(s):
Hot Spots
◽
Heat Dissipation
◽
Power Transistors
◽
Uniform Heat
Download Full-text
High Current Gain Silicon Carbide Bipolar Power Transistors
2006 IEEE International Symposium on Power Semiconductor Devices & IC's
◽
10.1109/ispsd.2006.1666091
◽
2006
◽
Cited By ~ 1
Author(s):
M. Domeij
◽
Hyung-Seok Lee
◽
C.-M. Zetterling
◽
M. Ostling
◽
A. Schoner
Keyword(s):
Silicon Carbide
◽
Current Gain
◽
High Current
◽
Power Transistors
Download Full-text
Influence of the minority carrier extracted by the base electrode on current gain of bipolar power transistors
Solid-State Electronics
◽
10.1016/j.sse.2006.02.013
◽
2006
◽
Vol 50
(3)
◽
pp. 480-488
Author(s):
Bo Zhang
◽
Wanjun Chen
◽
Kun Yi
◽
Zhaoji Li
Keyword(s):
Minority Carrier
◽
Current Gain
◽
Power Transistors
◽
Base Electrode
Download Full-text
Improvements in current gain and breakdown characteristics of silicon planar power transistors
Proceedings of the Indian Division of the Institution of Electronic and Radio Engineers
◽
10.1049/pidiere.1968.0008
◽
1968
◽
Vol 6
(3)
◽
pp. 93-98
Author(s):
K.S. Balain
◽
K.L. Jasuja
◽
S.S. Shekhawat
◽
S.K. Bhatnagar
Keyword(s):
Current Gain
◽
Power Transistors
Download Full-text
The effects of emitter impurity concentration on the high-current gain of silicon npn power transistors
Microelectronics Reliability
◽
10.1016/0026-2714(77)90567-4
◽
1977
◽
Vol 16
(6)
◽
pp. 655
Keyword(s):
Impurity Concentration
◽
Current Gain
◽
High Current
◽
Power Transistors
Download Full-text
The effects of emitter impurity concentration on the high-current gain of silicon NPN power transistors
10.1109/iedm.1976.189009
◽
1976
◽
Author(s):
R.U. Martinelli
◽
E. Jetter
Keyword(s):
Impurity Concentration
◽
Current Gain
◽
High Current
◽
Power Transistors
Download Full-text
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